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    Vishay Siliconix SI4450DY

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    Bristol Electronics SI4450DY 1,419
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    SI4450DY 480 4
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    Vishay Siliconix SI4450DY-T1

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    Vishay Intertechnologies SI4450DY-T1

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    Quest Components SI4450DY-T1 1,812
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    UNKNOWN SI4450DY-TI

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    POWER, FET
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    Quest Components SI4450DY 232
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    SI4450DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4450DY Fairchild Semiconductor 60V N-Channel PowerTrench MOSFET Original PDF
    Si4450DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4450DY Vishay Intertechnology N-Channel Enhancement-Mode MOSFET Original PDF
    SI4450DY Vishay Siliconix N-Channel 60-V (D-S) Rated MOSFET Original PDF
    SI4450DY_NL Fairchild Semiconductor 60V N-Channel PowerTrench MOSFET Original PDF
    Si4450DY SPICE Device Model Vishay N-Channel Enhancement-Mode MOSFET Original PDF
    SI4450DY-T1 Vishay Intertechnology N-Channel Enhancement-Mode MOSFET Original PDF

    SI4450DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4450DY

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4450DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    Si4450DY

    Abstract: No abstract text available
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4450DY S-49534--Rev. 06-Oct-97

    Si4450DY-T1

    Abstract: Si4450DY
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 7.5 0.03 @ VGS = 6.0 V 6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4450DY Si4450DY-T1 (with Tape and Reel)


    Original     		PDF Si4450DY Si4450DY-T1 08-Apr-05

    Si4450DY

    Abstract: No abstract text available
    Text: Si4450DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4450DY

    Si4450DY

    Abstract: No abstract text available
    Text: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4450DY S-47958--Rev. 15-Apr-96

    Si4450DY

    Abstract: No abstract text available
    Text: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4450DY S-47958--Rev. 15-Apr-96

    Si4450DY

    Abstract: No abstract text available
    Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4450DY

    Si4450DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4450DY 17-Apr-01

    Si4450DY

    Abstract: S-49534 vishaysiliconix
    Text: Si4450DY Siliconix N-Channel 60-V D-S Rated MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(ON) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4450DY S-49534--Rev. 06-Oct-97 S-49534 vishaysiliconix

    Si4450DY

    Abstract: Si4450DY-T1
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 7.5 0.03 @ VGS = 6.0 V 6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4450DY Si4450DY-T1 (with Tape and Reel)


    Original     		PDF Si4450DY Si4450DY-T1 S-03951--Rev. 26-May-03

    Si4450DY

    Abstract: Si4450DY-T1-E3
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D


    Original     		PDF Si4450DY Si4450DY-T1-E3 Si4450DY-T1-GE3 11-Mar-11

    SI4450DYT1E3

    Abstract: No abstract text available
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D


    Original     		PDF Si4450DY Si4450DY-T1-E3 Si4450DY-T1-GE3 11-Mar-11 SI4450DYT1E3

    SI4450DY-T1

    Abstract: SI4450DY
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 7.5 0.03 @ VGS = 6.0 V 6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4450DY Si4450DY-T1 (with Tape and Reel)


    Original     		PDF Si4450DY Si4450DY-T1 18-Jul-08

    Si4450DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4450DY 18-Jul-08

    Si4450DY

    Abstract: No abstract text available
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D


    Original     		PDF Si4450DY Si4450DY-T1-E3 Si4450DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4450DY

    Abstract: No abstract text available
    Text: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4450DY S-47958--Rev. 15-Apr-96

    Untitled

    Abstract: No abstract text available
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D


    Original     		PDF Si4450DY Si4450DY-T1-E3 Si4450DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4450DY

    Abstract: sv31
    Text: SPICE Device Model Si4450DY N-Channel Enhancement-Mode MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si4450DY sv31

    Untitled

    Abstract: No abstract text available
    Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4450DY

    S-49534

    Abstract: Si4450DY
    Text: Si4450DY N-Channel 60-V D-S Rated MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4450DY S-49534--Rev. 06-Oct-97 S-49534

    SI4450DY-T1-E3

    Abstract: Si4450DY SI4450DYT1E3 SI4450DY-T1-GE3
    Text: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D


    Original     		PDF Si4450DY Si4450DY-T1-E3 Si4450DY-T1-GE3 18-Jul-08 SI4450DYT1E3

    Untitled

    Abstract: No abstract text available
    Text: SI4450DY Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)7.5 I(DM) Max. (A) Pulsed I(D)5.5 @Temp (øC)70’ IDM Max (@25øC Amb)50 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55


    Original     		PDF SI4450DY

    S-49534

    Abstract: Si4450DY
    Text: Si4450DY N-Channel 60-V D-S Rated MOSFET Product Summary VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4450DY S-49534--Rev. 06-Oct-97 S-49534

    Untitled

    Abstract: No abstract text available
    Text: LT1738 Slew Rate Controlled Ultralow Noise DC/DC Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1738 is a switching regulator controller designed to lower conducted and radiated electromagnetic interference EMI . Ultralow noise and EMI are achieved by


    Original     		PDF LT1738 LT1738 LT176X 150mA OT-23 O-220 LT1777 LTC1922-1 LT3439