Si4364DY
Abstract: Si4364DY-T1-E3
Text: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous
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Si4364DY
Si4364DY-T1-E3
Si4364DY-T1-GE3
18-Jul-08
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Si4364DY
Abstract: No abstract text available
Text: SPICE Device Model Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4364DY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4364DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V
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Si4364DY
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous
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Si4364DY
Si4364DY-T1-E3
Si4364DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous
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Si4364DY
Si4364DY-T1-E3
Si4364DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4364DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation
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Si4364DY
Si4364DY-T1
Si4364DY-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous
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Si4364DY
Si4364DY-T1-E3
Si4364DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4364DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 19
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Si4364DY
S-04781--Rev.
08-Oct-01
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Si4364DY
Abstract: No abstract text available
Text: Si4364DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V
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Si4364DY
70ance,
S-03662--Rev.
14-Apr-03
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Si4364DY
Abstract: No abstract text available
Text: \\\ SPICE Device Model Si4364DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4364DY
0-to-10V
18-Apr-02
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Si4364DY
Abstract: 70680
Text: Si4364DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 19
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Si4364DY
S-20699--Rev.
20-May-02
70680
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Untitled
Abstract: No abstract text available
Text: Si4364DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 19 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation
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Si4364DY
Si4364DY-T1
Si4364DY-T1-E3
08-Apr-05
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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170M
Abstract: IRF7811A Si4364DY Si4416DY Si4420DY Si4842DY Si4880DY in-line switch
Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany Ultra-High Cell Density TrenchFET Devices: Obtaining the Critical Balance of Switching Performance Versus On-Resistance and Its Associated Impact on Device Selection Guy Moxey: Vishay Siliconix, Bracknell, UK
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m
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VSA-SG0019-0310
sud*50n025-06p
SUD70N03-04P
SI9120
sum45n25
SI9119
Si7810DN
sud*50n025-09p
SI2301ADS
SI4732CY
si9110
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