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Silicon Laboratories Inc SI4362-C2A-GMR RF RCVR FSK 142MHZ-1.05GHZ 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4362-C2A-GMR	Digi-Reel	44,022		1	1 $7.5 10 $5.759 100 $4.615 1000 $3.88444 10000 $3.88444	Buy Now
	SI4362-C2A-GMR	Cut Tape	44,022		1	1 $7.5 10 $5.759 100 $4.615 1000 $3.88444 10000 $3.88444	Buy Now
	SI4362-C2A-GMR	Reel	42,500		2,500	1 - 10 - 100 - 1000 - 10000 $3.275	Buy Now
Mouser Electronics	SI4362-C2A-GMR		4,989			1 $4.83 10 $4.07 100 $3.52 1000 $3.39 10000 $3.19	Buy Now
Verical	SI4362-C2A-GMR		1,269		2	1 - 10 $3.589 100 $3.589 1000 $3.589 10000 $3.589	Buy Now
Arrow Electronics	SI4362-C2A-GMR	Cut Strips	1,269	17 Weeks	1	1 $3.589 10 $3.316 100 $3.098 1000 $3.005 10000 $3.005	Buy Now
Newark	SI4362-C2A-GMR	Cut Tape	1,991		1	1 $4.35 10 $4.08 100 $3.49 1000 $3.49 10000 $3.49	Buy Now

Bristol Electronics	SI4362-C2A-GMR		90,984			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4362-C2A-GMR		72,787			1 $7.776 10 $7.776 100 $7.776 1000 $3.888 10000 $3.888	Buy Now
	SI4362-C2A-GMR		5,556			1 $6.756 10 $6.756 100 $6.756 1000 $3.378 10000 $3.378	Buy Now
Flip Electronics	SI4362-C2A-GMR		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Symmetry Electronics	SI4362-C2A-GMR				1	1 $3.49 10 $3.49 100 $3.49 1000 $3.49 10000 $3.49	Buy Now
Silicon Laboratories Inc SI4362-B1B-FM RF RX FSK 142MHZ-1.05GHZ 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4362-B1B-FM	Tray	1,335		1	1 $6 10 $4.607 100 $3.76413 1000 $3.275 10000 $3.275	Buy Now
Mouser Electronics	SI4362-B1B-FM					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical	SI4362-B1B-FM		475		3	1 - 10 $2.8 100 $2.8 1000 $2.8 10000 $2.8	Buy Now
Arrow Electronics	SI4362-B1B-FM		475		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	SI4362-B1B-FM	Bulk			1	1 $3.72 10 $3.72 100 $3.72 1000 $3.72 10000 $3.72	Buy Now

Symmetry Electronics	SI4362-B1B-FM				1	1 $3.49 10 $3.49 100 $3.49 1000 $3.49 10000 $3.49	Buy Now
Win Source Electronics	SI4362-B1B-FM		8,040			1 - 10 - 100 $3.3156 1000 $2.9726 10000 $2.9726	Buy Now
Silicon Laboratories Inc SI4362-C2A-GM IC RECEIVER/ADC 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4362-C2A-GM	Tray	181		1	1 $6.37 10 $4.895 100 $3.99938 1000 $3.30605 10000 $3.30605	Buy Now
Mouser Electronics	SI4362-C2A-GM		2,833			1 $5.79 10 $4.9 100 $3.67 1000 $3.32 10000 $3.32	Buy Now
Arrow Electronics	SI4362-C2A-GM		1,470		1	1 $4.596 10 $4.063 100 $3.307 1000 $2.902 10000 $2.902	Buy Now
Newark	SI4362-C2A-GM	Bulk			1	1 $6.02 10 $6.02 100 $6.02 1000 $6.02 10000 $6.02	Buy Now
Symmetry Electronics	SI4362-C2A-GM				1	1 $3.49 10 $3.49 100 $3.49 1000 $3.49 10000 $3.49	Buy Now
Silicon Laboratories Inc SI4362-B0B-FM RF RX FSK 142MHZ-1.05GHZ 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4362-B0B-FM	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Silicon Laboratories Inc SI4362-B1B-FMR IC EZRADIO PRO RX 20QFN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4362-B1B-FMR	Digi-Reel			1	1 $6.35 10 $6.35 100 $6.35 1000 $6.35 10000 $6.35	Buy Now
	SI4362-B1B-FMR	Cut Tape			1	1 $6.35 10 $6.35 100 $6.35 1000 $6.35 10000 $6.35	Buy Now
	SI4362-B1B-FMR	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $3.44006	Buy Now
Mouser Electronics	SI4362-B1B-FMR		4,306			1 $3.38 10 $3.33 100 $3.28 1000 $3.28 10000 $3.19	Buy Now
Verical	SI4362-B1B-FMR		5,623		2	1 - 10 $4.3444 100 $4.3444 1000 $4.3444 10000 $4.3444	Buy Now
Arrow Electronics	SI4362-B1B-FMR	Cut Strips	5,623	12 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	SI4362-B1B-FMR		2,335			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Quest Components	SI4362-B1B-FMR		1,868			1 $7.656 10 $7.656 100 $7.656 1000 $3.828 10000 $3.828	Buy Now
Symmetry Electronics	SI4362-B1B-FMR				1	1 $3.49 10 $3.49 100 $3.49 1000 $3.49 10000 $3.49	Buy Now
Win Source Electronics	SI4362-B1B-FMR		8,000			1 - 10 $5.08 100 $3.3867 1000 $3.3867 10000 $3.3867	Buy Now

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SI4362 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4362-B0B-FM	Silicon Laboratories	RF Receivers, RF/IF and RFID, RECEIVER RF EZRADIO PRO 20QFN	Original	PDF
SI4362-B1B-FM	Silicon Laboratories	RF Receivers, RF/IF and RFID, IC EZRADIO PRO RX 20QFN	Original	PDF
SI4362-B1B-FMR	Silicon Laboratories	RF Receivers, RF/IF and RFID, IC EZRADIO PRO RX 20QFN	Original	PDF
SI4362BDY	Vaishali Semiconductor	N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET	Original	PDF
SI4362BDY-RC	Vishay Siliconix	R-C Thermal Model Parameters	Original	PDF
SI4362BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 29A 8-SOIC	Original	PDF
SI4362BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 29A 8-SOIC	Original	PDF
SI4362-C2A-GM	Silicon Labs	Integrated Circuits (ICs) - Data Acquisition - ADCs/DACs - Special Purpose - EZRADIOPRO SUB GHZ RECEIVER, -11	Original	PDF
SI4362-C2A-GMR	Silicon Labs	RF/IF and RFID - RF Receivers - IC RCVR EZRADIO SUB GHZ 20QFN	Original	PDF
SI4362DY	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4362DY-E3	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4362DY SPICE Device Model	Vishay	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4362DY-T1	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si4362DY-T1E3	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF

SI4362 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si4362DY Abstract: No abstract text available Text: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4362DY 18-Jul-08
Untitled Abstract: No abstract text available Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous	Original	PDF	Si4362BDY Si4362BDY-T1 08-Apr-05
Si446x Abstract: si4432 AN-625 AN625 AN62 ipc 7351 ezra Si4432 9-pin Text: Si4362 H I GH -P E R F O R M A N C E , L O W -C U R R E N T R E C E I V E R Features  Frequency  Excellent selectivity performance range = 142–1050 MHz 60 dB adjacent channel 75 dB blocking at 1 MHz  Receive sensitivity = –126 dBm	Original	PDF	Si4362 Si4362 Si446x si4432 AN-625 AN625 AN62 ipc 7351 ezra Si4432 9-pin
Si4362DY Abstract: No abstract text available Text: Si4362DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V	Original	PDF	Si4362DY S-03662--Rev. 14-Apr-03
73832 Abstract: 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET AN609 Si4362BDY Text: Si4362BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4362BDY AN609 03-Mar-06 73832 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET
Si4362DY Abstract: No abstract text available Text: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4362DY S-50836Rev. 16-May-05
Si4362DY Abstract: Si4362DY-T1 Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V	Original	PDF	Si4362DY Si4362DY-T1 Si4362DY--E3 Si4362DY-T1--E3 18-Jul-08
74137 Abstract: datasheet 74137 Si4362BDY Text: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4362BDY S-52211Rev. 24-Oct-05 74137 datasheet 74137
Si446x Abstract: No abstract text available Text: AN643 Si446x/Si4362 RX LNA Matching 1. Introduction The purpose of this application note is to provide a description of the impedance matching of the RX differential low noise amplifier LNA on the Si446x/Si4362 family of RFICs. It is desired to simultaneously achieve two goals with the matching network:	Original	PDF	AN643 Si446x/Si4362 Si446x
Untitled Abstract: No abstract text available Text: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si4362BDY Si4362BDY-T1-E3 Si4362BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SI4432 Abstract: AN625 Si4432 9-pin 43621B AN-625 Text: Si4362 H I GH -P E R F O R M A N C E , L O W -C U R R E N T R E C E I V E R Features  Frequency  Excellent selectivity performance range = 142–1050 MHz 60 dB adjacent channel 75 dB blocking at 1 MHz  Receive sensitivity = –126 dBm	Original	PDF	Si4362 Si4362 SI4432 AN625 Si4432 9-pin 43621B AN-625
Si4362DY Abstract: Si4362DY-T1 Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V	Original	PDF	Si4362DY Si4362DY-T1 Si4362DY--E3 Si4362DY-T1--E3 S-40762--Rev. 19-Apr-04
Si4362BDY Abstract: Si4362BDY-T1-E3 "Package SO-8" Si4362DY Si4362DY-T1 Si4362DY-T1-E3 Text: Specification Comparison Vishay Siliconix Si4362BDY vs. Si4362DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4362BDY-T1-E3 Replaces Si4362DY-T1-E3 Si4362BDY-T1-E3 Replaces Si4362DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	PDF	Si4362BDY Si4362DY Si4362BDY-T1-E3 Si4362DY-T1-E3 Si4362DY-T1 31-Oct-06 "Package SO-8"
Untitled Abstract: No abstract text available Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V	Original	PDF	Si4362DY Si4362DY-T1 Si4362DY--E3 Si4362DY-T1--E3 08-Apr-05

Si4362BDY Abstract: TB-17 Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous	Original	PDF	Si4362BDY Si4362BDY-T1 52011--Rev. TB-17
Si4362DY Abstract: No abstract text available Text: \\\ SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4362DY 0-to-10V 12-Jun-02
AN609 Abstract: Si4362DY Text: Si4362DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4362DY AN609 13-Jan-06
TB-17 Abstract: Si4362BDY Si4362BDY-T1-E3 Text: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si4362BDY Si4362BDY-T1-E3 Si4362BDY-T1-GE3 18-Jul-08 TB-17
74137 Abstract: datasheet 74137 Si4362BDY Text: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4362BDY 18-Jul-08 74137 datasheet 74137
Untitled Abstract: No abstract text available Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous	Original	PDF	Si4362BDY Si4362BDY-T1 18-Jul-08
Untitled Abstract: No abstract text available Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V	Original	PDF	Si4362DY Si4362DY-T1 Si4362DY--E3 Si4362DY-T1--E3 08-Apr-05
Untitled Abstract: No abstract text available Text: Si4362DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 19	Original	PDF	Si4362DY S-20039--Rev. 04-Mar-02
ETH1-230LD Abstract: ETH1-230L pa1558nl pA1558 PIN DIAGRAM on pad for RJ45 LTC4259A LTC4264 DF1501S SMAJ58A IEEE 802.11n Text: LTC4264 High Power PD Interface Controller with 750mA Current Limit DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete High Power PD Interface Controller IEEE 802.3af Compliant Onboard 750mA Power MOSFET Complementary Power Good Outputs	Original	PDF	LTC4264 750mA 750mA LTC4263-1 LTC4267 400mA 200kHz 4264f ETH1-230LD ETH1-230L pa1558nl pA1558 PIN DIAGRAM on pad for RJ45 LTC4259A LTC4264 DF1501S SMAJ58A IEEE 802.11n
bifa antenna Abstract: 868 printed antenna design HTA 200-S Si446x/Si4362 Text: AN686 A NTENNAS FOR THE S i4 4 5 5 /4 3 5 X RF IC S 1. Introduction This application note provides guidelines and design examples to help users design antennas for the next generation EZRadio RF ICs. The matching principles for the Si4455 are described in detail in “AN693: Si4455	Original	PDF	AN686 Si4455 AN693: Si4455 Si435x, Si446x AN643: Si446x/4362 AN685: Si4455/435x bifa antenna 868 printed antenna design HTA 200-S Si446x/Si4362

SI4362 Search Results

SI4362 Price and Stock

Silicon Laboratories Inc SI4362-C2A-GMR

Silicon Laboratories Inc SI4362-B1B-FM

Silicon Laboratories Inc SI4362-C2A-GM

Silicon Laboratories Inc SI4362-B0B-FM

Silicon Laboratories Inc SI4362-B1B-FMR

SI4362 Datasheets (14)

SI4362 Datasheets Context Search

Si4362DY

Untitled

Si446x

Si4362DY

73832

Si4362DY

Si4362DY

74137

Si446x

Untitled

SI4432

Si4362DY

Si4362BDY

Untitled

Si4362BDY

Si4362DY

AN609

TB-17

74137

Untitled

Untitled

Untitled

ETH1-230LD

bifa antenna