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    SI2331DS Search Results

    SI2331DS Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2331DS Vishay Siliconix MOSFETs Original PDF
    SI2331DS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si2331DS SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI2331DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.2A SOT23-3 Original PDF
    SI2331DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.2A SOT23-3 Original PDF

    SI2331DS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS


    Original     		Si2331DS O-236 OT-23) Si2331DS-T1-E3 Si2331DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2331DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.048 @ VGS = - 4.5 V - 3.6 0.062 @ VGS = - 2.5 V - 3.2 0.090 @ VGS = - 1.8 V - 2.7 APPLICATIONS D Load Switch


    Original     		Si2331DS O-236 OT-23) Si2331DS-T1 08-Apr-05 PDF

    72307

    Abstract: Si2331DS
    Text: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2331DS 30-Apr-04 72307 PDF

    Si2331DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2331DS 18-Jul-08 PDF

    Si2331DS

    Abstract: No abstract text available
    Text: Si2331DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 3.6 - 12 0.062 at VGS = - 2.5 V - 3.2 0.090 at VGS = - 1.8 V - 2.7 • Halogen-free Option Available • TrenchFET Power MOSFETS


    Original     		Si2331DS O-236 OT-23) Si2331DS-T1-E3 Si2331DS-T1-GE3 18-Jul-08 PDF