SI2301 Search Results
SI2301 Price and Stock
Vishay Siliconix SI2301CDS-T1-E3MOSFET P-CH 20V 3.1A SOT23-3 |
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SI2301CDS-T1-E3 | Digi-Reel | 88,168 | 1 |
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SI2301CDS-T1-E3 | Bulk | 3,000 |
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SI2301CDS-T1-E3 | 33,000 | 1 |
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Micro Commercial Components SI2301-TPMOSFET P-CH 20V 2.8A SOT-23 |
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SI2301-TP | Cut Tape | 40,270 | 1 |
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SI2301-TP | 1,575 |
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SI2301-TP | Cut Tape | 2,980 | 5 |
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SI2301-TP | 333,000 | 1 |
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SI2301-TP | 19,453 |
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Micro Commercial Components SI2301HE3-TPP-CHANNEL MOSFET,SOT-23 |
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SI2301HE3-TP | Digi-Reel | 5,250 | 1 |
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SI2301HE3-TP |
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SI2301HE3-TP | 3,000 | 3,000 |
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SI2301HE3-TP | Cut Strips | 2,980 | 20 Weeks | 1 |
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EVVO Semiconductor SI2301ADS-EVP-CHANNEL ENHANCEMENT-MODE MOS F |
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SI2301ADS-EV | Cut Tape | 3,000 | 1 |
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Vishay Siliconix SI2301CDS-T1-BE3P-CHANNEL 20-V (D-S) MOSFET |
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SI2301CDS-T1-BE3 | Digi-Reel | 1,853 | 1 |
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SI2301CDS-T1-BE3 | 33,000 | 1 |
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SI2301 Datasheets (33)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2301-3A | Unknown | MOSFET SOT-23 P Channel 20V | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301A | UMW | 20V 2.8A 400MW 142MR@2.5V,2A 1V@ | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301ADS | Vishay Intertechnology | P-Channel 2.5-V (G-S) MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301ADS | Vishay Telefunken | V(ds): -20V V(gs): ±8V P-channel 2.5-V (G-S) MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301ADS-E3 |
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Transistor Mosfet P-CH 20V 1.75A 3TO-236 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301ADS-T1 |
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Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301ADS-T1-E3 |
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Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301AHE3-TP |
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Interface | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301A-TP |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301BD | Vishay Siliconix | P-Channel 2.5-V (G-S) MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301BDS | Vishay Siliconix | P-Channel 2.5-V (G-S) MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301BDS-E3 |
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Transistor Mosfet P-CH 20V 2.2A 3TO-236 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301BDS SPICE Device Model |
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P-Channel 2.5-V (G-S) MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301BDST1 |
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MOSFET,P CHAN,2.5V,SOT23 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Si2301BDS-T1 | Vishay Siliconix | P-Channel 2.5-V (G-S) MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301BDS-T1-BE3 | Vishay Siliconix | P-CHANNEL 2.5-V (G-S) MOSFET | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Si2301BDS-T1-E3 |
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Transistor Mosfet P-CH 20V 2.2A 3TO-236 T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301BDS-T1-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301BDS-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.2A SOT23-3 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI2301CDS-T1-BE3 | Vishay Siliconix | P-CHANNEL 20-V (D-S) MOSFET | Original |
SI2301 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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si2301Contextual Info: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC | |
si2301cds-t1-ge3Contextual Info: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3 |
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Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1 | |
SI2301Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V |
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SI2301 OT-23 OT-23 SI2301 | |
Si2301
Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
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Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05 | |
Si2301CDS
Abstract: SI2301CDS-T1-GE3 Si2301CDS-T1-E3 MOSFET SOT-23 Si2301BDS-T1-GE3 SI2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
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Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1 MOSFET SOT-23 | |
Si2301
Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
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Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 S-50694--Rev. 18-Apr-05 Si2301BDS SPICE Device Model | |
si2301
Abstract: "MARKING CODE S1" si2301 sot-23
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SI2301 OT-23 si2301 "MARKING CODE S1" si2301 sot-23 | |
Si2301
Abstract: Si2301BDS
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Si2301BDS O-236 OT-23) Si2301 S-22048--Rev. 18-Nov-02 | |
SI2301DS
Abstract: S5135
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Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96 S5135 | |
Si2301
Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3
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Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 11-Mar-11 | |
2430 markingContextual Info: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 18-Jul-08 2430 marking | |
TP548
Abstract: TP547 tp546 RLS4148 cke2 RSMRST R586
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SI2301DS TP543 TP516 TP542 TP549 TP550 BAS16 TP527 DTC144WK TP544 TP548 TP547 tp546 RLS4148 cke2 RSMRST R586 | |
Contextual Info: SPICE Device Model Si2301CDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si2301CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SI2301
Abstract: si2301 sot-23
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SI2301 OT-23 SI2301 si2301 sot-23 | |
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Contextual Info: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: Si2301CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. | |
SI2301DSContextual Info: Si2301DS P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96 | |
SI2301CDS-T1-GE3
Abstract: diode 18B
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Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 11-Mar-11 diode 18B | |
Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code |
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Si2301DS O-236 OT-23) Si2301DS-T1 08-Apr-05 | |
si2301adsContextual Info: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2301ADS O-236 OT-23) Si2301DS 08-Apr-05 | |
Si2301
Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS SPICE Device Model
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Si2301BDS O-236 OT-23) Si2301BDS-T1 Si2301BDS-T1--E3 Si2301 08-Apr-05 Si2301BDS SPICE Device Model | |
SI2301DS
Abstract: si2301 Si2301DS SPICE Device Model SI2301DS* equivalent
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Si2301DS 17-Apr-01 si2301 Si2301DS SPICE Device Model SI2301DS* equivalent | |
Si2301DSContextual Info: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2301DS O-236 OT-23) S-58543--Rev. 20-Jul-98 | |
Si2301CDS
Abstract: SI2301CDS-T1-GE3 SI2301CDS-T1-E3
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Si2301CDS 2002/95/EC O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 18-Jul-08 |