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Catalog Datasheet	MFG & Type	PDF	Document Tags
AT-232 Abstract: No abstract text available Text: M/Â-COM/ MIC RO ELECT RO NICS Sb451fl3 0GG0737 'ìSb » M A C O bRE D Digital Attenuator, 30 dB, 4 Bit DC-2 GHz Features AT-232 CR-6 • Attenuation 2 dB Steps to 30 dB • Temperature Stability +/- 0.18 dB from -55°C to +85°C Typical • Ultra Low DC Power Consumption	OCR Scan	PDF	Sb451fl3 0QG0737 AT-232 AT-232
Untitled Abstract: No abstract text available Text: ñ / A - C O M ADVANCE» Sñ DE \|sb4Slfl3 Q0D00D5 5 D MA4F200 Seríes Gallium Arsenide Power Field Effect Transistor GaAs FET m i Preliminary Data Sheet Description and Applications The MA4F200 series is a 1 micron recessed gate structure GaAs power FET for am plifier applica	OCR Scan	PDF	Q0D00D5 MA4F200
mmic case styles Abstract: No abstract text available Text: fl/A-COM ADV S E M I C O N D U C T O R M Ai 27E D S b 4 a i ô 3 000 0 33 M T T * 7 V . / 3 - O l MA4GM301T-500 2000 MA4GM301T SERIES 2010 2012 2100 GaAs MMIC DC - 2 GHz Voltage Variable Absorptive Attenuator Features • SINGLE OR DUAL DC BIAS CONTROL ■ EASILY CASCADABLE	OCR Scan	PDF	MA4GM301T-500 MA4GM301T mmic case styles
J2JL Abstract: No abstract text available Text: M/A-COM ADV SEMICONDUCTOR 27E D 51=42103 0Ü002Ö2 h T - 5 ! ‘ I I MA4GM204MC-500* GaAs MMIC D C -2 GHz SP4T Matched Switch i f lift,!,il «• 1^ 11 « . _L k +3] ft t- Features ■ BROAD BANDWIDTH DC - 2 GHz ■ LOW DISTORTION OPTION T il'rtT ■ 3 NANOSECOND SWITCHING	OCR Scan	PDF	MA4GM204MC-500* MA4GM204MC-500 J2JL
Untitled Abstract: No abstract text available Text: /qm M/A - CO M ADV S E M I C O N D U C T O R E7E D 5L.4E1Ö3 00 G0 54 4 T r•siii MA4GM202L-2000 202L-2010 202L-2012 MA4GM202L SERIES 202L-2100 GaAs MMIC DC-2 GHz SPDT Switch Features ■ LOW LOSS ■ 3 NANOSECOND SWITCHING ■ EASILY CASCADABLE ■ HIGH RELIABILITY	OCR Scan	PDF	MA4GM202L-2000 MA4GM202L 202L-2010 202L-2012 202L-2100 MA4GM202L-2000