SUB75P03 Search Results

SUP75P03-07-E3

Contextual Info: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available

SUB75P03-07

Abstract: SUP75P03-07 a2005v
Contextual Info: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available

A2005V

Abstract: SUB75P03-07 SUP75P03-07
Contextual Info: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View

SUP75P03-07-E3

Abstract: SUB75P03-07 SUP75P03-07
Contextual Info: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View

Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB75P03-08

Abstract: SUP75P03-08
Contextual Info: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available

Contextual Info: SUP/SUB75P03-08 Siliconix P-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB75P03Ć08 Top View PĆChannel MOSFET SUP75P03Ć08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SUB75P03-07

Abstract: SUP75P03-07
Contextual Info: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View

SUB75P03-07

Abstract: SUB75P03-07-E3 to263 package RthJA SUP75P03-07 TO-263CA
Contextual Info: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View

Contextual Info: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available

Contextual Info: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available

SUB75P03-07

Abstract: SUP75P03-07
Contextual Info: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View

Contextual Info: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available

Contextual Info: SPICE Device Model SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

56088

Contextual Info: Tem ic SUP/SUB75P03-08 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) -3 0 I d (A) r DS(on) ( ^ ) 0.008 -7 5 a T0-220AB o TO-263 < ni 1 n DRAIN connected to TAB G D S Top View GD S o D SUB75P03-08 Top View SUP75P03-08

SUB75P03-07

Abstract: SUP75P03-07 99537
Contextual Info: SUP/SUB75P03-07 Vishay Siliconix P-Channel Enhancement-Mode Transistors PRODUCT SUMMARY rDS on (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View

Contextual Info: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View

Contextual Info: SPICE Device Model SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUP75P03-08

Contextual Info: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB75P03-08

Abstract: SUP75P03-08
Contextual Info: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

AN609

Abstract: SUB75P03-07
Contextual Info: SUB75P03-07_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].