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    30v N channel MOS FET

    Abstract: P channel Junction FET P-Channel Enhancement FET
    Text: STT6601 N-Ch 2.8 A, 30 V, RDS(ON) 68 mΩ (P-Ch) -2.8 A, -30 V, RDS(ON) 120 mΩ N & P-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6601 is the N and P Channel enhancement mode power FET produced using high cell-density, DMOS trench


    Original     		PDF STT6601 STT6601 01-June-2007 30v N channel MOS FET P channel Junction FET P-Channel Enhancement FET