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    STPSC4H065DI Search Results

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    STPSC4H065DI Price and Stock

    STMicroelectronics STPSC4H065DI

    DIODE SIC 650V 4A TO220AC INS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STPSC4H065DI Tube 1
    • 1 $3.26
    • 10 $3.26
    • 100 $3.26
    • 1000 $1.10694
    • 10000 $1.02562
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    Avnet Americas STPSC4H065DI Tube 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.06665
    • 10000 $1.00511
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    Mouser Electronics STPSC4H065DI 135
    • 1 $3.23
    • 10 $1.75
    • 100 $1.6
    • 1000 $1.1
    • 10000 $1.02
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    Newark STPSC4H065DI Bulk 1
    • 1 $3.1
    • 10 $2.42
    • 100 $1.74
    • 1000 $1.44
    • 10000 $1.44
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    Future Electronics STPSC4H065DI Tube 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 $1.1
    • 1000 $1.06
    • 10000 $1.05
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    STPSC4H065DI Tube 19 Weeks 1,000
    • 1 -
    • 10 -
    • 100 $1.08
    • 1000 $1
    • 10000 $0.98
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    TME STPSC4H065DI 1
    • 1 $2.43
    • 10 $2.06
    • 100 $1.67
    • 1000 $1.67
    • 10000 $1.67
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    ComSIT USA STPSC4H065DI 1,000
    • 1 -
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    Avnet Silica STPSC4H065DI 1,500 17 Weeks 50
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    EBV Elektronik STPSC4H065DI 900 20 Weeks 50
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    STPSC4H065DI Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STPSC4H065DI STMicroelectronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 650V 4A TO-220AC Original PDF

    STPSC4H065DI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 PDF