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STN1012 Abstract: 1012 transistor SC89 SC-89 on SOT523 IS015 Text: 1012 STN STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A DESCRIPTION STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching	Original	PDF	STN1012 STN1012 OT-523 SC-89 380ohm 450ohm 1012 transistor SC89 SC-89 on SOT523 IS015

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STN1012

Abstract: 1012 transistor SC89 SC-89 on SOT523 IS015
Text: 1012 STN STN1012 Dual N Channel Enhancement Mode MOSFET 0.65A DESCRIPTION STN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

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STN1012 STN1012 OT-523 SC-89 380ohm 450ohm 1012 transistor SC89 SC-89 on SOT523 IS015