STD3N25 Search Results
STD3N25 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
STD3N25 |
![]() |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | |||
STD3N25 |
![]() |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | |||
STD3N25-1 |
![]() |
N-Channel Enhancement Mode Power MOS Transistor | Original | |||
STD3N25T4 |
![]() |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | Original | |||
STD3N25T4 |
![]() |
N-Channel Enhancement Mode Power MOS Transistor | Original |
STD3N25 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
3l4 diodeContextual Info: r Z ^ 7 Z S G S - T H O M S O N # M G IF ä < m [i< m @ R !]D S S T D 3 N 2 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss R d S o ii 250 V STD3N25 Id <2 0. 3 A • . . . . TYPICAL R ds(oii) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED |
OCR Scan |
STD3N25 O-251) O-252) O-251 O-252 0068772-B 3l4 diode | |
STD3N25Contextual Info: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V <2Ω 3A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED |
Original |
STD3N25 100oC O-251) O-252) STD3N25 | |
schematic diagram Electronic Ballast 236
Abstract: STD3N25
|
Original |
STD3N25 100oC O-251) O-252) schematic diagram Electronic Ballast 236 STD3N25 |