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Toshiba America Electronic Components SSM6N09FU(TE85L,F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SSM6N09FU(TE85L,F)		2,341			1 $1.105 10 $1.105 100 $1.105 1000 $0.442 10000 $0.3868	Buy Now
Chip One Stop	SSM6N09FU(TE85L,F)	Cut Tape	8,930			1 - 10 $0.687 100 $0.307 1000 $0.232 10000 $0.206	Buy Now

SSM6N09FU Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
SSM6N09FU	Toshiba		Original	PDF
SSM6N09FU	Toshiba	Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; V_DS(Q1), max (V): (max 30); V_GSS(Q1), max (V): (max +/-20); I_D Q1, max (mA): (max 400)	Original	PDF
SSM6N09FU	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Original	PDF

SSM6N09FU Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SSM6N09FU Abstract: No abstract text available Text: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)	Original	SSM6N09FU SSM6N09FU	PDF
Untitled Abstract: No abstract text available Text: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. : Ron = 0.7 max (@VGS = 10 V) : Ron = 1.2 (max) (@VGS = 4 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	SSM6N09FU	PDF
Untitled Abstract: No abstract text available Text: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. Unit: mm : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)	Original	SSM6N09FU	PDF
Untitled Abstract: No abstract text available Text: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. Unit: mm : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C)	Original	SSM6N09FU	PDF
Untitled Abstract: No abstract text available Text: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. Unit: mm : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)	Original	SSM6N09FU	PDF
SSM6N09FU Abstract: No abstract text available Text: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. Unit: mm : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C)	Original	SSM6N09FU SSM6N09FU	PDF
SSM6N09FU Abstract: No abstract text available Text: SSM6N09FU 東芝電界効果トランジスタシリコンNチャネルMOS形 SSM6N09FU ○ 高速スイッチング単位: mm • 小型パッケージで高密度実装に最適。 • オン抵抗が低い。 : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)	Original	SSM6N09FU SSM6N09FU	PDF
Untitled Abstract: No abstract text available Text: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package • Low Drain-Source ON resistance. Unit: mm : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Absolute Maximum Ratings (Ta = 25°C)	Original	SSM6N09FU	PDF
SSM6N09FU Abstract: No abstract text available Text: SSM6N09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package · Low Drain-Source ON resistance. Unit: mm : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)	Original	SSM6N09FU SSM6N09FU	PDF
Untitled Abstract: No abstract text available Text: SSM6N09FU Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N09FU High Speed Switching Applications • Small package · Low Drain-Source ON resistance. Unit: mm : Ron = 0.7 Ω max (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)	Original	SSM6N09FU	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original		PDF
lm2804 Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.	Original	BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R	PDF
SSM3K7002 Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,	Original	3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T	PDF

ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126	PDF
IGBT GT30F124 Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 Text: 東芝半導体製品総覧表 2011 年 1 月版トランジスタバイポーラ小信号トランジスタ接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ高周波バイポーラ小信号トランジスタ	Original	SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075	PDF
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Text: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
TPCA8064 Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028 Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	BCE0082B TPCA8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028	PDF
8aa1 Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168 Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製	Original	050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122	PDF
toshiba laptop charging CIRCUIT diagram Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5	Original	BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120	PDF
TK12A10K3 Abstract: tk12a10k TK33A60V TPCA8065 TK40E10K3 SSM6K407TU TPCA8064 tk6a65d equivalent TPCA*8036 TK100G10N1 Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4	Original		PDF

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SSM6N09FU Search Results

SSM6N09FU Price and Stock

Toshiba America Electronic Components SSM6N09FU(TE85L,F)

SSM6N09FU Datasheets (3)

SSM6N09FU Datasheets Context Search

SSM6N09FU

Untitled

Untitled

Untitled

Untitled

SSM6N09FU

SSM6N09FU

Untitled

SSM6N09FU

Untitled

5252 F 1009 4-pin

lm2804

SSM3J307T

SSM3K7002

ESM 740

IGBT GT30F124

2SK4207

TOSHIBA MG150N2YS40

TPCA*8064

8aa1

GT30F124

transistor bc 245

toshiba laptop charging CIRCUIT diagram

TK12A10K3