SSM3J05FU Search Results

Contextual Info: SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 3.3 Ω max (@VGS = −4 V) • Low gate threshold voltage : Ron = 4.0 Ω (max) (@VGS = −2.5 V)

SSM3J05FU

Abstract: SSM3J05
Contextual Info: TO SH IBA SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU POWER MANAGEMENT SWITCH HIGH SPEED SWITCHING APPLICATIONS Small Package Low on Resistance : Ron = 3.3 Cl Max. @VQg = —4 V T> — A A n i.* o n — TV/Tr^r * * -LVXO.Ä.

Contextual Info: SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 3.3 Ω max (@VGS = −4 V) • Low gate threshold voltage : Ron = 4.0 Ω (max) (@VGS = −2.5 V)

SSM3J05FU

Contextual Info: SSM3J05FU 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J05FU ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に適しています。 • オン抵抗が低い。 : RDS ON = 3.3 Ω max (@VGS = −4 V)

SSM3J05FU

Contextual Info: SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 3.3 Ω max (@VGS = −4 V) • Low gate threshold voltage : Ron = 4.0 Ω (max) (@VGS = −2.5 V)

Contextual Info: TOSHIBA SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU Unit in mm POWER MANAGEMENT SWITCH HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • • • Small Package Low on Resistance 1.2510.1 : Ron = 3.3 Cl Max. @VQg : Ron = 4.0 O Max. (@VGS

Contextual Info: TOSHIBA SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU Unit in mm POWER MANAGEMENT SWITCH HIGH SPEED SWITCHING APPLICATIONS 2 .1 1 0 .1 • • • Small Package Low on Resistance 1.25 ±0.1 +I oo : Ron = 3.3 Cl Max. @ Vgs

Contextual Info: TOSHIBA TENTATIVE SSM3J05FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J05FU POWER MANAGEMENT SWITCH U nit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • Sm all Package • Low on Resistance 1.2510.1 : Ron = 3.3 Cl Max. @ V q§

SSM3J05FU

Abstract: SSM3J05
Contextual Info: SSM3J05FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J05FU Power Management Switch High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 3.3 Ω max (@VGS = −4 V) · Low gate threshold voltage : Ron = 4.0 Ω (max) (@VGS = −2.5 V)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

SSM3K7002

Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
Contextual Info: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

8aa1

Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
Contextual Info: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TK12A10K3

Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
Contextual Info: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4

tpc8118 equivalent replacement

Abstract: SSM3J307T Zener diode smd 071 A01
Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

TK12A10K3

Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Contextual Info: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S