SQ4942EY Search Results
SQ4942EY Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
---|---|---|---|---|---|---|
SQ4942EY-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 8A 8SOIC | Original |
SQ4942EY Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: SQ4942EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
Original |
SQ4942EY AEC-Q101 2002/95/EC SQ4942EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQ4942EY Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.020 • TrenchFET Power MOSFET RDS(on) () at VGS = 4.5 V |
Original |
SQ4942EY 2002/95/EC AEC-Q101 SQ4942EY-T1-GE3 11-Mar-11 | |
Contextual Info: SQ4942EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
Original |
SQ4942EY AEC-Q101 2002/95/EC SQ4942EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQ4942EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
Original |
SQ4942EY AEC-Q101 2002/95/EC SQ4942EY-T1-GE3 11-Mar-11 | |
SQ4942EY-T1-GE3Contextual Info: SQ4942EY Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 0.020 RDS(on) (Ω) at VGS = 4.5 V 0.026 ID (A) 6.0 Configuration Dual D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 5 D2 G2 • Halogen-free According to IEC 61249-2-21 |
Original |
SQ4942EY 2002/95/EC AEC-Q101 18-Jul-08 SQ4942EY-T1-GE3 | |
Contextual Info: SQ4942EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested |
Original |
SQ4942EY AEC-Q101 2002/95/EC SQ4942EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQ4942EY Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.020 • TrenchFET Power MOSFET RDS(on) () at VGS = 4.5 V |
Original |
SQ4942EY 2002/95/EC AEC-Q101 SQ4942EY-T1-GE3 18-Jul-08 | |
DPAK/TO-252Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the |
Original |
Ups-2726 VMN-PL0469-1311 DPAK/TO-252 | |
SQ2315ES
Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
|
Original |
AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ |
Original |
AEC-Q101 VMN-SG2151-1212 | |
SQ3427
Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
|
Original |
AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309 |