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Infineon Technologies AG SPP07N60C3XKSA1 MOSFET N-CH 650V 7.3A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP07N60C3XKSA1	Tube	709		1	1 $3.09 10 $3.09 100 $1.4014 1000 $1.01167 10000 $1.01167	Buy Now
Mouser Electronics	SPP07N60C3XKSA1		484			1 $3.15 10 $3.15 100 $1.43 1000 $1.04 10000 $1.04	Buy Now
Verical	SPP07N60C3XKSA1		12,168		12	1 - 10 - 100 $1.3436 1000 $0.9793 10000 $0.9793	Buy Now
Arrow Electronics	SPP07N60C3XKSA1		12,168	39 Weeks	1	1 $1.5127 10 $1.5127 100 $1.3934 1000 $1.0156 10000 $1.0156	Buy Now
Newark	SPP07N60C3XKSA1	Bulk	620		1	1 $3 10 $1.4 100 $1.33 1000 $1.1 10000 $1.09	Buy Now

Rochester Electronics	SPP07N60C3XKSA1		36		1	1 - 10 - 100 $1.29 1000 $1.07 10000 $0.9562	Buy Now
ComSIT USA	SPP07N60C3XKSA1		447			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SPP07N60C3XKSA1			40 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPP07N60C3XKSA1		2,095			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP07N60C3HKSA1 MOSFET N-CH 650V 7.3A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP07N60C3HKSA1	Tube			500	1 - 10 - 100 - 1000 $1.00778 10000 $1.00778	Buy Now
Vyrian	SPP07N60C3HKSA1		689			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP07N60C3XK Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP07N60C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPP07N60C3XK	Tube		39 Weeks	1,000	1 - 10 - 100 - 1000 $0.48278 10000 $0.45138	Buy Now
Vyrian	SPP07N60C3XK		1,111			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPP07N60C3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPP07N60C3		49			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SPP07N60C3		39			1 $3.84 10 $2.4 100 $2.112 1000 $2.112 10000 $2.112	Buy Now
TME	SPP07N60C3				1	1 $1.46 10 $1.16 100 $1.08 1000 $1.08 10000 $1.08	Get Quote
ComSIT USA	SPP07N60C3		906			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPP07N60C3		1,129			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others SPP07N60C3 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	SPP07N60C3		20			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SPP07N60C3 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
SPP07N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 7.3A 83W, MOS-FET N-Channel enhanced	Original	PDF
SPP07N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPP07N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.60 ?, 7.3A	Original	PDF
SPP07N60C3HKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V TO-220AB	Original	PDF
SPP07N60C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 7.3A TO-220AB	Original	PDF

SPP07N60C3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
07N60 Abstract: 07N60C3 Contextual Info: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated • Extreme dv/dt rated	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60 07N60C3	PDF
07N60C3 Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3	PDF
smd diode marking G12 Abstract: SPA07N60C3 Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated	Original	SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-1 PG-TO-220-3-31: SPP07N60C3 smd diode marking G12	PDF
07N60C3 Abstract: 07n60c Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 07n60c	PDF
07N60C3 Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07N60C3	PDF
07n60c3 Abstract: 07N60C3 SMD Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07n60c3 07N60C3 SMD	PDF
07N60C3 Abstract: 07n60c 07n60 Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 P-TO220-3-1 07N60C3 07n60c 07n60	PDF
07N60C3 Abstract: SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3 Contextual Info: Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 SPB07N60C3 07n60c transistor 07n60c3 SPA07N60C3 SPI07N60C3 SPP07N60C3	PDF
07n60c3 Abstract: 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12 Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07n60c3 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12	PDF
07N60C3 Abstract: 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3 Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated	Original	SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07N60C3 07N60C3 equivalent 07N60 PG-TO220 SPA07N60C3 SPI07N60C3 PG-TO220-3 SPP07N60C3	PDF
07n60c3 Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated	Original	SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3	PDF
07N60C3 Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3 Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3	PDF
07N60C3 equivalent Abstract: 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3 Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 Q67040-S4422 07N60C3 07N60C3 equivalent 07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3	PDF
Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.6 Ω •=Periodic avalanche rated ID	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3	PDF

07N60C3 Abstract: PG-TO220-3-31 Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated	Original	SPP07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 P-TO220-3-1 PG-TO-220-3-31: 07N60C3	PDF
Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220 • Extreme dv/dt rated	Original	SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31	PDF
07n60c3 Abstract: transistor 07n60c3 SPP07N60C3 SPA07N60C3 Q67040-S4400 07N60C3 equivalent SPI07N60C3 PG-TO220-3 SMD marking code 55A TRANSISTOR SMD MARKING CODE G12 Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated	Original	SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31 07n60c3 transistor 07n60c3 SPP07N60C3 SPA07N60C3 Q67040-S4400 07N60C3 equivalent SPI07N60C3 PG-TO220-3 SMD marking code 55A TRANSISTOR SMD MARKING CODE G12	PDF
07n60c3 Abstract: 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3 Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 07n60c3 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3	PDF
07N60C3 Abstract: AN-TO220-3-31-01 Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 AN-TO220-3-31-01	PDF
07n60c3 Abstract: 07N60C3 equivalent to220 pcb footprint SPA07N60C3 07N60 SPI07N60C3 PG-TO220 PG-TO220-3 smd transistor marking br SPP07N60C3 Contextual Info: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220 • Extreme dv/dt rated	Original	SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220-3-31 PG-TO262-3 PG-TO220 P-TO220-3-31 P-TO220-3-1 PG-TO-220-3-31: 07n60c3 07N60C3 equivalent to220 pcb footprint SPA07N60C3 07N60 SPI07N60C3 PG-TO220 PG-TO220-3 smd transistor marking br SPP07N60C3	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312	PDF
CTX22-16134 Contextual Info: NCP1230GEVB NCP1230 90 Watt, Universal Input Adapter Power Supply Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL General Description Design Specification The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications	Original	NCP1230GEVB NCP1230 EVBUM2131/D CTX22-16134	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original		PDF
smd marking g12 Contextual Info: SPB07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability	Original	SPB07N60C3 P-TO263-3-2 07N60C3 SPB07N60C3 Q67040-S4394 smd marking g12	PDF

SPP07N60C3 Search Results

SPP07N60C3 Price and Stock

Infineon Technologies AG SPP07N60C3XKSA1

Infineon Technologies AG SPP07N60C3HKSA1

Infineon Technologies AG SPP07N60C3XK

Infineon Technologies AG SPP07N60C3

Others SPP07N60C3

SPP07N60C3 Datasheets (5)

SPP07N60C3 Datasheets Context Search

07N60

07N60C3

smd diode marking G12

07N60C3

07N60C3

07n60c3

07N60C3

07N60C3

07n60c3

07N60C3

07n60c3

07N60C3

07N60C3 equivalent

07N60C3

07n60c3

07n60c3

07N60C3

07n60c3

STR-G6551

CTX22-16134

igbt welding machine scheme

smd marking g12