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    SMP5912 Price and Stock

    InterFET Corporation IFN5912

    JFET JFET N-Channel(Dual) -25V Low Ciss
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    Mouser Electronics IFN5912
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    InterFET Corporation SMP5912

    JFET JFET N-Channel(Dual) -25V Low Ciss
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMP5912
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    • 1000 $11.68
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    InterFET Corporation SMP5912TR

    JFET JFET N-Channel (Dual) -25V Low Ciss
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    Mouser Electronics SMP5912TR
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    SMP5912 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SMP5912 InterFET Dual N-Channel silicon junction field-effect transistor Original PDF
    SMP5912 InterFET N-CHANNEL SILICON JUNCTION FET SOT23 Original PDF
    SMP5912* InterFET N-CHANNEL DUAL SILICON JUNCTION FET SOIC8 Original PDF

    SMP5912 Datasheets Context Search

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    SMP5911

    Abstract: SMP5912
    Text: Databook.fxp 1/14/99 11:32 AM Page B-64 B-64 01/99 SMP5911, SMP5912 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Wideband Differential Amplifiers At 25°C free air temperature: SMP5911 SMP5912 Static Electrical Characteristics Min Min Gate Source Breakdown Voltage


    Original
    PDF SMP5911, SMP5912 SMP5911 NJ30L SMP5911 SMP5912

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


    Original
    PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116

    2N5912

    Abstract: 2N5911 B-23 SMP5911 SMP5912 NJ-30
    Text: Databook.fxp 1/14/99 11:31 AM Page B-23 B-23 01/99 2N5911, 2N5912 Dual N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Total Device Power Dissipation


    Original
    PDF 2N5911, 2N5912 2N5911 NJ30L NJ36D SMP5911, SMP5912 2N5912 2N5911 B-23 SMP5911 SMP5912 NJ-30

    2N5911

    Abstract: 2N5912 IFN5911 IFN5912 SMP5911 SMP5912
    Text: Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original
    PDF NJ30L 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 2N5911 2N5912 IFN5911 IFN5912 SMP5911 SMP5912

    Untitled

    Abstract: No abstract text available
    Text: B 64 9-97 SMP 5911, SMP 5912 m jÄTN ^H ÄN N ETsinCO N TÜ N CTlO N m ELD ^FFK^R^ • WIDEBAND DIFFERENTIAL AMPLIFIERS SMP5011 At 25 °C free air temperature: Min Static Electrical Characteristics Gate Source Breakdown Voltage V b r g s s Gate Reverse Current


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    PDF SMP5011 NJ30L SMP5912