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    United Technologies Corporation SMD5962F9657202V9A

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    United Technologies Corporation SMD5962F9322603V9A

    UTMC SMD5962F9322603V9A
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    SMD5962 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11C68

    Abstract: stk 090 STK11C68 CDIP28 STK11C68-SF45I
    Text: STK11C68, STK11C68-5 SMD5962–92324 8Kx8 SoftStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, and 55 ns Read Access & R/W Cycle Times The Simtek STK11C68 is a 64Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell.


    Original     		PDF STK11C68, STK11C68-5 SMD5962 STK11C68 ML0007 11C68 stk 090 CDIP28 STK11C68-SF45I

    STK12C68

    Abstract: STK12C68-5C35M stk12c68-5c55m package dimensions STK12C68-5K35M STK12C68-5L35M
    Text: STK12C68-5 SMD5962-94599 64 Kbit (8K x 8) AutoStore nvSRAM Features Functional Description • 35 ns and 55 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated


    Original     		PDF STK12C68-5 SMD5962-94599) STK12C68-5 STK12C68 STK12C68-5C35M stk12c68-5c55m package dimensions STK12C68-5K35M STK12C68-5L35M

    STK 453 030

    Abstract: stk 090 12C68 STK12C68 CDIP28 stk 014 STK12C68-SF45 5962-94599 NVSRAM stk 453
    Text: STK12C68, STK12C68-5 SMD5962-94599 8Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, 55 ns Read Access & Write Cycle Time The Simtek STK12C68 is a 64Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell.


    Original     		PDF STK12C68, STK12C68-5 SMD5962-94599) STK12C68 ML0008 STK 453 030 stk 090 12C68 CDIP28 stk 014 STK12C68-SF45 5962-94599 NVSRAM stk 453

    CDIP28

    Abstract: CLCC-28 STK11C68 clcc28 CDIP28 package 5962-9232405MXC smd L35 sop28 5962-9232406MYA 5962-9232404MYX
    Text: STK11C68 SMD5962–92324 8Kx8 SoftStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, and 55 ns Read Access & R/W Cycle Times The Simtek STK11C68 is a 64Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


    Original     		PDF STK11C68 SMD5962 STK11C68 ML0007 CDIP28 CLCC-28 clcc28 CDIP28 package 5962-9232405MXC smd L35 sop28 5962-9232406MYA 5962-9232404MYX

    SMD5962

    Abstract: No abstract text available
    Text: STK11C68-5 SMD5962-92324 64 Kbit (8 K x 8) SoftStore nvSRAM Features Functional Description • 35 ns, 45 ns, and 55 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance


    Original     		PDF STK11C68-5 SMD5962-92324) STK11C68-5 SMD5962

    STK11C68-5K55M

    Abstract: No abstract text available
    Text:  STK11C68-5 SMD5962-92324 64 Kbit (8K x 8) SoftStore nvSRAM Features Functional Description • 35 ns, 45 ns, and 55 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance


    Original     		PDF STK11C68-5 SMD5962-92324) STK11C68-5 STK11C68-5K55M

    Untitled

    Abstract: No abstract text available
    Text: STK12C68-5 SMD5962-94599 64 Kbit (8 K x 8) AutoStore nvSRAM Features Functional Description • 35 ns and 55 ns access times ■ Hands off automatic STORE on power down with external 68 µF capacitor ■ STORE to QuantumTrap nonvolatile elements is initiated


    Original     		PDF STK12C68-5 SMD5962-94599) STK12C68-5

    taa 723

    Abstract: MO-041
    Text: STK11C68-5 SMD5962-92324 64 Kbit (8K x 8) SoftStore nvSRAM Features Functional Description • 35 ns, 45 ns, and 55 ns access times ■ Pin compatible with industry standard SRAMs ■ Software initiated nonvolatile STORE ■ Unlimited Read and Write endurance


    Original     		PDF STK11C68-5 SMD5962-92324) STK11C68-5 taa 723 MO-041

    CDIP28

    Abstract: STK12C68-SF45 STK12C68 sddc SMD5962-9459903MXX SMD5962 STK12C68-5L35M STK12C68-SF45I
    Text: STK12C68 SMD5962-94599 8Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 35, 45, 55 ns Read Access & Write Cycle Time The Simtek STK12C68 is a 64Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance


    Original     		PDF STK12C68 SMD5962-94599) STK12C68 ML0008 CDIP28 STK12C68-SF45 sddc SMD5962-9459903MXX SMD5962 STK12C68-5L35M STK12C68-SF45I

    Untitled

    Abstract: No abstract text available
    Text: SRAM AS8S128K32 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-95595: -Q • SMD 5962-93187: -P or -PN • MIL-STD-883 FEATURES • Access times of 15, 17, 20, 25, 35, and 45 ns • Built in decoupling caps for low noise operation


    Original     		PDF AS8S128K32 MIL-STD-883 256Kx16 5962-9318705H4A 5962-9318705H4C 5962-9318706H4A 5962-9318706H4C 5962-9318707H4A 5962-9318707H4C 5962-9318708H4A

    7801301

    Abstract: SMD5962-7801301XC MSK0002H 7801-301XC LH0002 MSK0002
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 0002 HIGH SPEED, BUFFER AMPLIFIER AMP 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: Industry Wide LH0002 Replacement High Input Impedance-180KΩ Min Low Output Impedance-10Ω Max


    Original     		PDF MIL-PRF-38534 LH0002 Impedance-180K Impedance-10 SMD5962-7801301XC LH0002. MSK0002 MSK0002H Military-Mil-PRF-38534 7801-301XC 7801301 SMD5962-7801301XC MSK0002H 7801-301XC MSK0002

    Untitled

    Abstract: No abstract text available
    Text: SRAM AS8S128K32 Austin Semiconductor, Inc. 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View 68 Lead CQFP (Q & QT) AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-95595: -Q or -QT • SMD 5962-93187: -P or -PN • MIL-STD-883 FEATURES • Access times of 20, 25, 35, 45 ns


    Original     		PDF MIL-STD-883 AS8S128K32 256Kx16 -28K32PN-25/883C AS8S128K32PN-25/883C AS8S128K32PN-20/883C AS8S128K32P-55/883C AS8S128K32P-45/883C

    5962-9559506HAA

    Abstract: 702 smd AS8S128K32 5962-9559507HAA MICROSS SQUARE 5962-9559510HMC
    Text: SRAM AS8S128K32 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View AVAILABLE AS MILITARY SPECIFICATIONS 68 Lead CQFP (Q & Q1) • SMD 5962-95595: -Q • SMD 5962-93187: -P or -PN • MIL-STD-883 FEATURES • Access times of 15, 17, 20, 25, 35, and 45 ns


    Original     		PDF AS8S128K32 MIL-STD-883 256Kx16 5962-9318706H4A 5962-9318706H4C 5962-9318707H4A 5962-9318707H4C 5962-9318708H4A 5962-9318708H4C 5962-9318709H4A 5962-9559506HAA 702 smd AS8S128K32 5962-9559507HAA MICROSS SQUARE 5962-9559510HMC

    W3J2256M72-XPBX

    Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
    Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part Number W3J128M64G-XPBXƒ W3J128M72G-XPBXƒ W3J256M72G-XPBX* W3J2256M72-XPBX*


    Original     		PDF W3J128M64G-XPBX W3J128M72G-XPBX W3J256M72G-XPBX* W3J2256M72-XPBX* W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX W3J2256M72-XPBX W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX

    SMD-5962-89696

    Abstract: No abstract text available
    Text: Tem ic Semiconductors 64 K x 1 High Speed CMOS SRAM HM 65787 Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65787 is a high speed CMOS static RAM organized as 65536 x 1 bit. It is manufactured using


    OCR Scan     		PDF SMD5962-89696 SMD5962-8601 SMD-5962-89696

    b883

    Abstract: No abstract text available
    Text: Tem ic HM 65797 S e m i c o n d u c t o r s 256 K x 1 High Speed CMOS SRAM Short description. P lease refer to the full datasheet available on T EM IC w eb for detailed technical inform ation. Introduction T he H M 65797 is a high speed CM O S static RA M


    OCR Scan     		PDF SMD5962-88725) b883

    Untitled

    Abstract: No abstract text available
    Text: Temic M67205 Semiconductors 8 K x 9 CMOS Parallel FIFO Introduction The M67205 implements a first-in first-out algorithm, featuring asynchronous read/write operations. The FULL and EMPTY flags prevent data overflow and underflow. The Expansion logic allows unlimited expansion in word


    OCR Scan     		PDF M67205 M67205

    Untitled

    Abstract: No abstract text available
    Text: ASI A ustin S em iconductor, Inc. 128K x 32 SRAM PIN ASSIGNMENT SRAM MEMORY ARRAY Top View 68 Lead CQFP (Q & QT) AVAILABLE AS MILITARY SPECIFICATIONS 987é543216867666564636261 60]1/D16 I/DO[ 10 59]I/D17 I/DI[ 11 58]I/D18 I/D2[ 12 I/D3[ 13 57]1/D19 I/D4[ 14


    OCR Scan     		PDF I/06l AS8S128K32PN-20/883C AS8S128K32P- 55/883C 45/883C

    M67132

    Abstract: No abstract text available
    Text: Temic Semiconductors 2 K x 8 CMOS Dual Port RAM M67132/M67142 Description The M67132/67142 are very low power CMOS dual port static RAMs organized as 2048 x 8. They are designed to be used as a stand-alone 8 bit dual port RAM or as a combination MASTER/SLAVE dual port for 16 bits or


    OCR Scan     		PDF m67132/m67142 M67132/67142 SMD5962-87002) SCC9301033) M67132

    Untitled

    Abstract: No abstract text available
    Text: HS-1245RH H A R R IS a S E M I C O N D U C T O R Radiation Hardened, Dual, High Speed, Low Power Video Operational Amplifier with Output Disable August 1996 Description Features • The HS-1245RH is a radiation hardened dual high speed, low power current feedback amplifier built with Harris’ propri­


    OCR Scan     		PDF HS-1245RH HS-1245RH MIL-PRF-38535. 5962F9683201VCA MIL-PRF-38535 530MHz 1-800-4-HARRIS 00b7b32

    Untitled

    Abstract: No abstract text available
    Text: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed Equal Access and Cycle Times - 25/35ns (Commercial)


    OCR Scan     		PDF P4C163/P4C163L 25/35ns 25/35/45ns P4C163L P4C163L 28-Pin SMD-5962-88683 P4C163/L

    Untitled

    Abstract: No abstract text available
    Text: P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS -FEATURES • Full CMOS, 6T Cell ■ Output Enable Control Function ■ High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial) -15/20/25/35 ns (Military)


    OCR Scan     		PDF P4C116 24-Pin 28-Pin 384-bit -12PC -12SC -12JC -15PC

    Untitled

    Abstract: No abstract text available
    Text: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times


    OCR Scan     		PDF P4C150 24-Pin 28-Pin SMD-5962-88588 -15LM -20LM -25LM

    65788

    Abstract: No abstract text available
    Text: Tem ic HM 65788 Semi co n du ct o rs 16 K X 4 High Speed CMOS SRAM Short description. Please refer to the full datasheet available on TEMIC web for detailed technical information. Introduction The HM 65788 is a high speed CMOS static RAM organized as 16384 x 4 bits. It is manufactured using


    OCR Scan     		PDF SMDS962-89692 SMD5962-8 65788