SIC01M Search Results

SIC01M Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SIC01M-18 Contextual Info: SIC01M-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01M-18 SIC01M-18	PDF
uvc photodiode Abstract: uv sensor SIC01M silicon carbide TO-39, UVC Contextual Info: UVC-selective SiC based UV sensor SIC01M-C Features • UVC Photodiode with medium-sized photoactive area • Good compromise between signal strength and price • Silicon Carbide based chip for extreme irradiation hardness • Spectral Response in accordance with DVGW W 294	Original	SIC01M-C uvc photodiode uv sensor SIC01M silicon carbide TO-39, UVC	PDF
uv flame sensor Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M Contextual Info: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area	Original	SIC01M S280nm S400nm uv flame sensor FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M	PDF
SIC01M-5LENS Contextual Info: SIC01M-5LENS V 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01M-5LENS SIC01M-5LENS	PDF
SIC01S-B18 Contextual Info: SIC01S-B18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01S-B18 SIC01S-B18	PDF
SIC01S-18ISO90 Abstract: SiC Photodiodes Contextual Info: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC	Original	SIC01S-18ISO90 SIC01S-18ISO90 SiC Photodiodes	PDF
SIC01L-5 Contextual Info: SIC01L-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01L-5 SIC01L-5	PDF
SIC01L-C5 Contextual Info: SIC01L-C5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01L-C5 SIC01L-C5	PDF
SIC01S-C18 Contextual Info: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01S-C18 SIC01S-C18	PDF
SIC01L-18 Contextual Info: SIC01L-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01L-18 SIC01L-18	PDF
SIC01S-18 Contextual Info: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01S-18 SIC01S-18	PDF
SIC01XL-5 Contextual Info: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The	Original	SIC01XL-5 SIC01XL-5	PDF
smd diode UJ 64 A Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI Contextual Info: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.	Original	RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI	PDF