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Vishay Siliconix SI6467DQ-T1 6800 MA, 12 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI6467DQ-T1		3,629			1 $0.36 10 $0.36 100 $0.36 1000 $0.168 10000 $0.15	Buy Now
Fairchild Semiconductor Corporation SI6467DQ 9200 MA, 20 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI6467DQ		2,378			1 $0.5004 10 $0.5004 100 $0.5004 1000 $0.2085 10000 $0.2085	Buy Now
Rochester Electronics	SI6467DQ		330		1	1 $0.2492 10 $0.2492 100 $0.2342 1000 $0.2118 10000 $0.2118	Buy Now

SI6467DQ Datasheets (7)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI6467DQ		Fairchild Semiconductor	P-Channel 1.8V Specified PowerTrench MOSFET		Original	PDF
Si6467DQ		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
Si6467DQ		Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI6467DQ		Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI6467DQ-DS		Vishay Telefunken	DS-Spice Model for Si6467DQ		Original	PDF
Si6467DQ SPICE Device Model		Vishay	P-Channel 108-V (G-S) MOSFET		Original	PDF
SI6467DQ-T1		Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET		Original	PDF

SI6467DQ Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si6467DQ Abstract: No abstract text available Text: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V "8.0 0.019 @ VGS = - 2.5 V "7.0 0.027 @ VGS = - 1.8 V "5.8 S* TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D Si6467DQ G *Source Pins 2, 3, 6 and 7	Original	PDF	Si6467DQ 18-Jul-08
Si6467DQ Abstract: No abstract text available Text: SPICE Device Model Si6467DQ Vishay Siliconix P-Channel 108-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si6467DQ 05-Nov-98
Untitled Abstract: No abstract text available Text: Si6467DQ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate	Original	PDF	Si6467DQ
Untitled Abstract: No abstract text available Text: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V "8.0 0.019 @ VGS = - 2.5 V "7.0 0.027 @ VGS = - 1.8 V "5.8 S* TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D Si6467DQ G *Source Pins 2, 3, 6 and 7	Original	PDF	Si6467DQ 08-Apr-05
Si6467DQ Abstract: No abstract text available Text: Si6467DQ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate	Original	PDF	Si6467DQ
Si6467DQ Abstract: No abstract text available Text: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.014 @ VGS = –4.5 V "8.0 0.019 @ VGS = –2.5 V "7.0 0.027 @ VGS = –1.8 V "5.8 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6467DQ G *Source Pins 2, 3, 6 and 7	Original	PDF	Si6467DQ S-59526--Rev. Oct-98
Si6467BDQ-T1-E3 Abstract: DIODE TA 70/40 Si6467BDQ Si6467DQ Si6467DQ-T1 72900 Text: Specification Comparison Vishay Siliconix Si6467BDQ vs. Si6467DQ Description: P-Channel, 1.8 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6467BDQ-T1 Replaces Si6467DQ-T1 Si6467BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6467DQ-T1	Original	PDF	Si6467BDQ Si6467DQ Si6467BDQ-T1 Si6467DQ-T1 Si6467BDQ-T1-E3 09-Nov-06 DIODE TA 70/40 72900
Si6467DQ Abstract: No abstract text available Text: Si6467DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.014 @ VGS = - 4.5 V "8.0 0.019 @ VGS = - 2.5 V "7.0 0.027 @ VGS = - 1.8 V "5.8 S* TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D Si6467DQ G *Source Pins 2, 3, 6 and 7	Original	PDF	Si6467DQ S-59526--Rev. Oct-98
diode 8a 600v Abstract: 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge Text: Fairchild New Product Highlights, #1, August 2001 Interface & Logic Optoelectronics Fairchild New Product Highlights Analog Discrete Power Switch for off-line power supply See page 2 The Latest Fairchild Innovations Contents Comprehensive New Product List	Original	PDF	Power247TM, diode 8a 600v 4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba logic level complementary MOSFET IGBT gate optocoupler driver for a buck converter hma121 0.75KW layout 48 VOLT 150 AMP smps FET pair n-channel p-channel full bridge
PC MOTHERBOARD foxconn sc242 Abstract: transistor C458 intel 8255 hp 530 motherboard circuit and solution A0344 INTEL 82550 LT1587ADJ NPN C458 slot 1 foxconn sc242 intel ic 8255 Text: R Intel 820E Chipset Design Guide May 2001 Document Number: 298187-003 Intel® 820E Chipset R Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability	Original	PDF	CLK66 P08-050-SL-A-G PC MOTHERBOARD foxconn sc242 transistor C458 intel 8255 hp 530 motherboard circuit and solution A0344 INTEL 82550 LT1587ADJ NPN C458 slot 1 foxconn sc242 intel ic 8255
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	PDF	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Siliconix Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123	Original	PDF	2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Untitled Abstract: No abstract text available Text: SI6467DQ VISHAY Siliconix P-Channel 1.8-V G-S MOSFET New Product so TSSOP-8 D S D Si6467DQ 'Source Pins 2, 3, 6 and 7 must be tied common S S S G D Top View 6 D A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )	OCR Scan	PDF	SI6467DQ Si6467DQ S-59526â 19-Oct-98