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    SI4559 Price and Stock

    Vishay Siliconix SI4559ADY-T1-E3

    MOSFET N/P-CH 60V 5.3A 8SOIC
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    DigiKey SI4559ADY-T1-E3 Cut Tape 67,380 1
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    • 10 $1.521
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    SI4559ADY-T1-E3 Digi-Reel 67,380
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    SI4559ADY-T1-E3 Reel 65,000 2,500
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    RS SI4559ADY-T1-E3 Bulk 2,500
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    New Advantage Corporation SI4559ADY-T1-E3 45,000 1
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    Vishay Siliconix SI4559ADY-T1-GE3

    MOSFET N/P-CH 60V 5.3A 8SOIC
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    DigiKey SI4559ADY-T1-GE3 Cut Tape 2 1
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    RS SI4559ADY-T1-GE3 Bulk 2,060 3 Weeks 1
    • 1 $0.71
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    New Advantage Corporation SI4559ADY-T1-GE3 15,000 1
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    Vishay Intertechnologies SI4559ADY-T1-E3

    MOSFETs -60V Vds 20V Vgs SO-8 N&P PAIR
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    Mouser Electronics SI4559ADY-T1-E3 14,517
    • 1 $1.87
    • 10 $1.3
    • 100 $0.987
    • 1000 $0.702
    • 10000 $0.662
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    Verical SI4559ADY-T1-E3 47,500 2,500
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    Arrow Electronics SI4559ADY-T1-E3 47,500 13 Weeks 2,500
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    Newark SI4559ADY-T1-E3 Bulk 1,872 1
    • 1 $2.19
    • 10 $1.62
    • 100 $1.35
    • 1000 $1.15
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    Quest Components SI4559ADY-T1-E3 2,006
    • 1 $1.75
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    • 100 $1.75
    • 1000 $0.455
    • 10000 $0.4375
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    SI4559ADY-T1-E3 233
    • 1 $1.95
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    • 100 $0.585
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    TTI SI4559ADY-T1-E3 Reel 65,000 2,500
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    EBV Elektronik SI4559ADY-T1-E3 143 Weeks 2,500
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    IBS Electronics SI4559ADY-T1-E3 2,500
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    Vyrian SI4559ADY-T1-E3 46,694
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    Vishay Intertechnologies SI4559ADY-T1-GE3

    Mosfet, Dual, Complement, 60V, 4.5A/Soic Rohs Compliant: Yes |Vishay SI4559ADY-T1-GE3
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    Newark SI4559ADY-T1-GE3 Cut Tape 2,034 5
    • 1 $2.69
    • 10 $1.84
    • 100 $1.36
    • 1000 $1.36
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    SI4559ADY-T1-GE3 Reel 2,500
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    • 10000 $0.679
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    TTI SI4559ADY-T1-GE3 Reel 25,000 2,500
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    TME SI4559ADY-T1-GE3 2,323 1
    • 1 $0.883
    • 10 $0.748
    • 100 $0.627
    • 1000 $0.506
    • 10000 $0.386
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    EBV Elektronik SI4559ADY-T1-GE3 2,500 143 Weeks 2,500
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    Vyrian SI4559ADY-T1-GE3 8,984
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    Vishay BLH SI4559ADY-T1-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4559ADY-T1-E3 2,508 4
    • 1 -
    • 10 $1.3125
    • 100 $0.4922
    • 1000 $0.3675
    • 10000 $0.3412
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    Find more SI4559 price and stock on Findchips.com

    SI4559 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4559ADY Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET Original PDF
    SI4559ADY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 60V 5.3A 8-SOIC Original PDF
    SI4559ADY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 60V 5.3A 8-SOIC Original PDF
    Si4559EY Unknown Metal oxide N/P-channel field effect transistor enh. Original PDF
    Si4559EY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si4559EY Vishay Intertechnology Dual Enhancement-Mode MOSFET (N- and P-Channel) Original PDF
    SI4559EY Vishay Siliconix N-Channel 60-V (D-S), 175°C MOSFET Original PDF
    SI4559EY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N & P- Channel, 60/-60V, PAir, Pkg Style SO-8 Scan PDF
    Si4559EY SPICE Device Model Vishay Dual Enhancement-Mode MOSFETS (N- and P-Channel) Original PDF

    SI4559 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI4559ADY

    Abstract: No abstract text available
    Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5


    Original     		Si4559ADY Si4559ADY-T1-E3 Si4559ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    si4559

    Abstract: SI4559ADY-T1-E3 Si4559ADY
    Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5


    Original     		Si4559ADY Si4559ADY-T1-E3 Si4559ADY-T1-GE3 11-Mar-11 si4559 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V


    Original     		Si4559EY 2002/95/EC Si4559EY-T1-E3 Si4559EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4559EY

    Abstract: No abstract text available
    Text: Si4559EY Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1 S2 SO-8 S1 1


    Original     		Si4559EY S-57253--Rev. 24-Feb-98 PDF

    Si4559ADY

    Abstract: MOSFET 719
    Text: SPICE Device Model Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4559ADY S-60180Rev. 13-Feb-06 MOSFET 719 PDF

    S6018

    Abstract: SI4559ADY
    Text: SPICE Device Model Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4559ADY 18-Jul-08 S6018 PDF

    3045n

    Abstract: Si4559ADY
    Text: Si4559ADY New Product Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = –10 V –3.9 0.150 at VGS = –4.5 V


    Original     		Si4559ADY Si4559ADY-T1--E3 08-Apr-05 3045n PDF

    Si4559EY

    Abstract: No abstract text available
    Text: Si4559EY Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1 S2 SO-8 S1 1


    Original     		Si4559EY 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5


    Original     		Si4559ADY Si4559ADY-T1-E3 Si4559ADY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5


    Original     		Si4559ADY Si4559ADY-T1-E3 Si4559ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4559ADY

    Abstract: Si4559EY Si4559ADY-T1-GE3 Si4459EY-T1-GE3 si4559ey-t1-e3
    Text: Specification Comparison Vishay Siliconix Si4559ADY vs. Si4559EY Description: Package: Pin Out: N- and P-Channel, 60-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4559ADY-T1-GE3 replaces Si4459EY-T1-GE3 Si4559ADY-T1-E3 or Si4559ADY-T1-GE3 replaces Si4559EY-T1-E3


    Original     		Si4559ADY Si4559EY Si4559ADY-T1-GE3 Si4459EY-T1-GE3 Si4559ADY-T1-E3 Si4559EY-T1-E3 Si4559EY-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4559EY Dual Enhancement-Mode MOSFETS N- and P- Channel Characteristics • N- and P- channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		Si4559EY PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V


    Original     		Si4559EY 2002/95/EC Si4559EY-T1-E3 Si4559EY-T1-GE3 11-Mar-11 PDF

    Si4559EY

    Abstract: No abstract text available
    Text: Si4559EY Dual N- and P-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V N-Channel 60 P-Channel –60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1 S2 SO-8 S1 1 8 D1


    Original     		Si4559EY S-49520--Rev. 18-Dec-96 PDF

    Si4559EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4559EY Vishay Siliconix Dual Enhancement-Mode MOSFETS N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4559EY S-52575Rev. 02-Jan-06 PDF

    Si4559EY

    Abstract: No abstract text available
    Text: Si4559EY Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary VDS (V) N Channel N-Channel 60 P Channel P-Channel –60 60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1


    Original     		Si4559EY S-57253--Rev. 24-Feb-98 PDF

    Si4559EY

    Abstract: No abstract text available
    Text: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V


    Original     		Si4559EY 2002/95/EC Si4559EY-T1-E3 Si4559EY-T1-GE3 18-Jul-08 PDF

    Si4559EY

    Abstract: No abstract text available
    Text: Si4559EY Dual N- and P-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V N-Channel 60 P-Channel –60 rDS(on) (W) ID (A) 0.055 @ VGS = 10 V "4.5 0.075 @ VGS = 4.5 V "3.9 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 D1 D1 S2 SO-8 S1 1 8 D1


    Original     		Si4559EY S-49520--Rev. 18-Dec-96 PDF

    si4559ey-t1-e3

    Abstract: No abstract text available
    Text: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V


    Original     		Si4559EY 2002/95/EC Si4559EY-T1-E3 Si4559EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    resistor

    Abstract: resistor 2512 si4559 resistors 2512 resistor TMC239A TMC239A-LA datasheet resistor
    Text: Top Layer for Layout with TMC239A-LA and 4 transistors SI4559 in SO8 package. The center back plane of the TMC239A-LA is connected to the GND layer using a number of vias. The layout also contains two 2512 sense resistors and a short to GND resistor on the left side .


    Original     		TMC239A-LA SI4559 resistor resistor 2512 resistors 2512 resistor TMC239A datasheet resistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4559ADY New Product Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel P Channel P-Channel ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = –10 V –3.9 0.150 at VGS = –4.5 V


    Original     		Si4559ADY Si4559ADY-T1--E3 18-Jul-08 PDF

    Si4559EY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4559EY Vishay Siliconix Dual Enhancement-Mode MOSFETS N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4559EY 18-Jul-08 PDF

    si4559

    Abstract: Si4559EY si4559ey-t1-e3
    Text: Si4559EY Vishay Siliconix N- and P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V ± 4.5 0.075 at VGS = 4.5 V ± 3.9 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V


    Original     		Si4559EY 2002/95/EC Si4559EY-T1-E3 Si4559EY-T1-GE3 11-Mar-11 si4559 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4559ADY Vishay Siliconix N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 0.120 at VGS = - 10 V - 3.9 0.150 at VGS = - 4.5 V - 3.5


    Original     		Si4559ADY Si4559ADY-T1-E3 Si4559ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF