SGSP358 Search Results

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

sgsp358

Abstract: tr/pcb-3/SGSP358
Contextual Info: SGS-THOMSON SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS on SGSP358 50 V 0.3 a Id 7A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:

fast diode 1.5 A

Contextual Info: FZ~Z SGS-THOMSON ^7#» M glM [I[L[IÊ¥[M)M(g§ SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS(on) SGSP358 50 V 0.3 Q Id 7 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE

diode t25 4 HO

Contextual Info: 3GE 1 ' D • 7 ^ 2 3 7 OOB'Hö? SCS-THO M SO N ;ILII gW BB(Si b ■ s6 SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP358 • • • • Voss 50 V ^ D S (o n 0.3 n 7 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING

Contextual Info: rzrj SGS-THOMSON [» »[IILligretMOtgS SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 7 7 x 7 7 mils Al A u /C r/N i/A u

GS 669

Abstract: MC008
Contextual Info: F=7 SGS-THOMSON * IM « SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 77x77 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

Contextual Info: SGSP358 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)

Contextual Info: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:

sgs*P381

Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177

sgsp257

Abstract: GSP-35 P2-58 P357 SGSP258
Contextual Info: S G S-THOnSON 07E J> | 7cìacìS37 0017074 0 I ^ -V. , 73e 173 71 D SGSP257/P258^ r tf I h .SGSP^ 7 /P 3 5 8 J N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

BUZ10A

Abstract: ISOWATT-220 TO-220 MOS MTP15N05L MTP3055A SGSP382 SGSP222 BUZ10 SGSP492 sgsp482
Contextual Info: SCS‘THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS SOT 82 TO 3 TO 240 ISOTOP : STANDARD VERSION Internal schematic diagrams ISOTOP: FASTON VERSION Without final «V» in the sales type D o D G O- Ò S POWER MOS HIMOS (IGBT) V(BR) DSS RDS(on) max (V) (0)

ISOWATT220

Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Contextual Info: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00

Bow94c

Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

ISOWATT-220

Abstract: mtp15n05 BU210A ISOWATT220
Contextual Info: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00

sgs*P381

Abstract: IRFp150 To3 package bu245a BR 1300
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50