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    SG4000GXH26 Search Results

    SG4000GXH26 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SG4000GXH26 Toshiba INVERTER APPLICATION Scan PDF
    SG4000GXH26 Toshiba GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE Scan PDF
    SG4000GXH26G Toshiba INVERTER APPLICATION Scan PDF
    SG4000GXH26G Toshiba GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE Scan PDF

    SG4000GXH26 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG4000GXH26 DATA LOW SNUBBER TYPE SG4000GXH26J INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current


    OCR Scan     		PDF SG4000GXH26 SG4000GXH26J SG4000GXH26

    SG4000GXH26

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG4000GXH26 DATA LOW SNUBBER TYPE SG4000GXH26 Unit in mm INVERTER APPLICATION 4500V *T (RMS) = Í900A I T G Q M = 4000A di / dt = 500A / //s dv/dt=1000V / jus Repetitive Peak Off-State Voltage


    OCR Scan     		PDF SG4000GXH26 SG4000GXH26) SG4000GXH26

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A SG4000GXH26G TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000GXH26G Unit in mm INVERTER APPLICATION Repetitive Peak off-state Voltage V d RM —4500V Note 1 R.M.S On-State Current !t (RMS) = 12(>0A (Tf = 76°C) Peak Turn-Off Current XTGQM —4000A


    OCR Scan     		PDF SG4000GXH26G

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG4000GXH26G DATA LOW SNUBBER TYPE SG4000GXH26G Unit in mm INVERTER APPLICATION Repetitive Peak off-state Voltage V d RM = 4500V (Note 1) R.M.S On-State Current IT (RMS) = 1200A (Tf = 76°C)


    OCR Scan     		PDF SG4000GXH26G SG4000GXH26G) SG4000GXH26G

    sg4000GXH26G

    Abstract: No abstract text available
    Text: TOSHIBA SG4000GXH26G TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000GXH26G INVERTER APPLICATION Repetitive Peak off-state Voltage : V d r m = 4500 V Note 1 R.M.S On-State Current : I t (RMS) = 1200 A (Tf = 76°C) Peak Turn-Off Current : It GQM — 4000 A


    OCR Scan     		PDF SG4000GXH26G sg4000GXH26G

    SG4000GXH26

    Abstract: inverter lg ig
    Text: T O S H IB A SG4000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage


    OCR Scan     		PDF SG4000GXH26 Rat100 SG4000GXH26 inverter lg ig

    SG4000GXH26G

    Abstract: No abstract text available
    Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG4000GXH26G DATA LOW SNUBBER TYPE SG4000GXH26G Unit in mm INVERTER APPLICATION • • t • • Repetitive Peak off-state Voltage Vj)RM = 4500V (Note 1) R.M.S On-State Current lT(RMS) = 1200A(Tf=76°C)


    OCR Scan     		PDF SG4000GXH26G SG4000GXH26G) SG4000GXH26G

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA LOW SNUBBERTYPE SG4000GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: • R.M.S. On-State Current: • Peak Turn-Off Current: • Critical Rate of Rise of On-State Current: • Critical Rate of Rise of Off-State Voltage:


    OCR Scan     		PDF SG4000GXH26

    snubber diode

    Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
    Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11


    OCR Scan     		PDF SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G

    500EXH21

    Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
    Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that


    OCR Scan     		PDF SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX

    100EXG11

    Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
    Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26


    OCR Scan     		PDF SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v

    gate turn off thyristors

    Abstract: 500EXH21 800gxhh21 800exh21
    Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that


    OCR Scan     		PDF 1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21