Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current
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SG3000JX24
SG3000JX24)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 Unit in mm INVERTER APPLICATION £ -0 3 .5 x 0 .2 Repetitive Peak Off-State Voltage : V d r m = 6000V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current
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SG3000JX24
SG3000JX24)
1350VI
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SG3000JX24
Abstract: No abstract text available
Text: SG3000JX24 TOSHIBA SG3000JX24 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION Unit in mm 0 3 .5 1 0.2 Repetitive Peak Off-State Voltage : V d RM —6000V R.M.S On-State Current : It RMS = 1200A Peak Turn-Off Current : It GQM —3000A Critical Rate of Rise of On-State Current : di / dt = 400A / jus
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SG3000JX24
3000a
00A//Â
350V/jus
SG3000JX24
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50HzH
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG3000JX24 DATA SG3000JX24 INVERTER APPLICATION • Repetitive Peak Off-State Voltage : V d r m ;= 6000V • R.M.S On-State C urrent • Peak Turn-Off C urrent : It (RMS)= 1200A : It GQM = 3000A
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SG3000JX24
SG3000JX24)
50HzH
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Tf76
Abstract: t6000
Text: SG3000JX24 TOSHIBA GATE TURN-OFF THYRISTOR SG3000JX24 SG3000JX24 U nit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : = 6000V R.M.S On-State Current : It (RMS) = 1200A Peak Turn-Off Current : It GQM = 3000A Critical Rate of Rise of On-State Current : d i/d t= 4 0 0 A //o s
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SG3000JX24
SG3000JX24)
Tf76
t6000
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snubber diode
Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11
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SG600GXH26
SG800W24
SG1000GXH26
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2000GXH26
SG2200GXH24
SG2500EX24
snubber diode
SG2500GX
gto sg3000gxh24
SG3000GXH24
free diode
1000GXHH22
800EXH21
SG3000GXH
100GXHH21
SG4000GXH26G
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500EXH21
Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that
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SG1200EX24
SG1500EX24
SG2000EX24
SG2200GXH24
SG3000EX24
SG3000GXH24
SG3000JX24
SG2000GXH26
SG800GXH24
SG1000GXH26
500EXH21
100gxhh21
800A 75m
gate turn off thyristors
TOSHIBA 100GXHH21
800GXHH21
800GX
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100EXG11
Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26
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SG2500EX24
SG3000EX24
SG4000EX26
SG2000R24
SG2000U24
SG2000W24
SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
100EXG11
500EXH21
200FXG12
200FXH12
800GXHH21
gto 200A
100exh
gto 300A
100GXHH21
4500v
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gate turn off thyristors
Abstract: 500EXH21 800gxhh21 800exh21
Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that
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1SG1200EX24
SG1500EX24
SG2000EX24
SG2000EX26
SG2200GXH24
SG3000EX24
SGR3000EX26
SG4000EX26
SGR3000GXH26
SG4000GXH26
gate turn off thyristors
500EXH21
800gxhh21
800exh21
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