SG2000EX26 Search Results

Contextual Info: TOSHIBA LOW SNUBBERTYPE SG2000EX26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: V DRM = 2 5 0 0 V Note 1. • R.M.S. On-State Current: h (RMS = • Peak Turn-Off Current: 'tg q m = 2000A • Critical Rate of Rise of On-State Current:

SG2000EX26

Contextual Info: TO SH IBA SG2000EX26 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION • • • • • LOW SNUBBER TYPE SG2000EX26 Unit in mm Repetitive Peak Off-State Voltage : V d r m = 2500 V Note 1 R.M.S On-State Current : It (RMS) = 1050 A Peak Turn-Off Current

Contextual Info: SEMICONDUCTOR T O SH IB A TECHNICAL TOSHIBA GATE TURN-OFF THYRISTOR. SG2000EX26 DATA LOW SNUBBER TYPE SG2000EX26J INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : Vd r m = 2500V (Note 1 R.M.S On-State Current : It (RMS)= 1050A

100EXG11

Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v
Contextual Info: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26

SG2000EX26

Contextual Info: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG2000EX26 DATA LOW SNUBBER TYPE SG2000EX26 INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 2500V (Note 1) IT(RMS) = 1050A R.M.S On-State Current iTGQM = 2000A Peak Turn-Off Current

snubber diode

Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G
Contextual Info: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11

500EXH21

Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24
Contextual Info: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that

gate turn off thyristors

Abstract: 500EXH21 800gxhh21 800exh21
Contextual Info: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that