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    SEMIX653GB176HDS Price and Stock

    SEMIKRON SEMIX653GB176HDS

    Igbt Power Module; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- Rohs Compliant: Yes |Semikron SEMIX653GB176HDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX653GB176HDS Bulk 6
    • 1 -
    • 10 $329.03
    • 100 $310.09
    • 1000 $310.09
    • 10000 $310.09
    		Buy Now
    RS SEMIX653GB176HDS Bulk 1
    • 1 $1285.1
    • 10 $1285.1
    • 100 $1285.1
    • 1000 $1285.1
    • 10000 $1285.1
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    SEMIKRON SEMIX653GB176HDS 27890450

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX653GB176HDS 27890450 1
    • 1 $984.87
    • 10 $777.63
    • 100 $699.67
    • 1000 $699.67
    • 10000 $699.67
    		Get Quote

    SEMIX653GB176HDS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX653GB176HDS Semikron Trench IGBT Modules Original PDF
    SEMiX653GB176HDS Semikron Trench IGBT Modules Original PDF

    SEMIX653GB176HDS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX653GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V


    Original     		SEMiX653GB176HDs SEMiX653GB176HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C


    Original     		SEMiX653GB176HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C


    Original     		SEMiX653GB176HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		SEMiX653GB176HDs B100/125 R100exp B100/125 1/T-1/T100) PDF

    IC1700

    Abstract: No abstract text available
    Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C


    Original     		SEMiX653GB176HDs IC1700 PDF