SEP8703
Abstract: honeywell 940 Quantum Effect Devices A360 SE3470 SE5470 SEC555 SEP8790 teradyne A360
Text: Reliability Summary of SEC555 AlGaAs:Si IRED Chip Long-Term Operating Life Study INTRODUCTION Honeywell is committed to the manufacture of reliable, high quality optoelectronic products. An ISO9001 based quality system is maintained, providing the necessary
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SEC555
ISO9001
SE3470,
SEP8703
honeywell 940
Quantum Effect Devices
A360
SE3470
SE5470
SEP8790
teradyne A360
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Untitled
Abstract: No abstract text available
Text: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.6, OCT. 30, 2013 1 MX29GL512F Contents FEATURES. 5
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MX29GL512F
PM1617
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MX29GL512
Abstract: MX29GL512E 00FF0001 29GL512 Q0-Q15 PM1524 mx29gl512e 70 MX29GL512EHMC-10Q MX29GL512EHT2I-10Q MX29GL512ELT2I-10Q
Text: MX29GL512E H/L MX29GL512E H/L DATASHEET P/N:PM1524 REV. 1.1, NOV. 22, 2010 1 MX29GL512E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable - 67,108,864 x 8 / 33,554,432 x 16
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MX29GL512E
PM1524
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL512
00FF0001
29GL512
Q0-Q15
PM1524
mx29gl512e 70
MX29GL512EHMC-10Q
MX29GL512EHT2I-10Q
MX29GL512ELT2I-10Q
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MX29GL256FLT2I-90Q
Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
PM1544
MX29GL256F
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256FLT2I-90Q
MX29GL256FHT
MX29GL256
MX29GL256FHT2I-90Q
MX29GL256FL
MX29GL256FH
29GL256
MX29GL256FLXFI-90Q
PM1544
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MX29GL512FHMI-11G
Abstract: MX29GL512FHMI-10Q
Text: MX29GL512F H/L-70SSOP MX29GL512F H/L 70 SSOP DATASHEET P/N:PM1673 REV. 1.2, JAN. 06, 2012 1 MX29GL512F H/L-70SSOP SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable
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MX29GL512F
H/L-70SSOP
PM1673
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL512FHMI-11G
MX29GL512FHMI-10Q
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Untitled
Abstract: No abstract text available
Text: MX29LA640E H/L 64M-BIT [4M x 16/8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8M Bytes/4M Words switchable • 128 Equal Sectors with 64K Bytes 32K words each - Any combination of sectors can be erased with erase suspend/resume function
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MX29LA640E
64M-BIT
16/8M
100mA
11us/word
45s/chip
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MX29GL256F
Abstract: MX29GL256FHT2I-90Q MX29GL256FLT2I-90Q TSOP 62 Package MX29GL256FLT2i
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.3, JAN. 12, 2012 1 MX29GL256F Contents FEATURES. 5
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MX29GL256F
MX29GL256F
PM1544
MX29GL256FHT2I-90Q
MX29GL256FLT2I-90Q
TSOP 62 Package
MX29GL256FLT2i
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MX29GL256FHT
Abstract: MX29GL256FH
Text: MX29GL256F MX29GL256F DATASHEET ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
MX29GL256F
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256FHT
MX29GL256FH
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MX29GA257F
Abstract: MX29GA256F JESD47E Q0-Q15 MX29GA MX29GA256FL MXIC MX MX29GA257 MX29GA256F/MX29GA257F
Text: MX29GA256F H/L MX29GA257F H/L MX29GA256F/MX29GA257F DATASHEET P/N:PM1649 REV. 1.0, AUG. 08, 2011 1 MX29GA256F H/L MX29GA257F H/L Contents FEATURES. 5
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MX29GA256F
MX29GA257F
MX29GA256F/MX29GA257F
PM1649
JESD47E
Q0-Q15
MX29GA
MX29GA256FL
MXIC MX
MX29GA257
MX29GA256F/MX29GA257F
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Untitled
Abstract: No abstract text available
Text: MX29GL512E H/L MX29GL512E H/L DATASHEET The MX29GL512E product family is not recommended for new designs. The MX29GL512F family is the recommended replacement. Please refer to MX29GL512F datasheet for full specifications and ordering information, or contact your local sales representative for
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MX29GL512E
MX29GL512F
MX29GL512F
PM1524
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Untitled
Abstract: No abstract text available
Text: MX29GL128F MX29GL128F DATASHEET P/N:PM1683 REV. 1.4, OCT. 30, 2013 1 MX29GL128F Contents FEATURES. 5
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MX29GL128F
PM1683
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Untitled
Abstract: No abstract text available
Text: MX68GL1G0F MX68GL1G0F DATASHEET P/N:PM1727 REV. 1.3, OCT. 30, 2013 1 MX68GL1G0F Contents 1. FEATURES. 5
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MX68GL1G0F
PM1727
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MX29GL256
Abstract: MX29GL256E MX29GL128 mx29gl128eh MX29GL128EL MX29GL128elt2i-90g MX29GL256ELT2I MX29GL256ELT2I-90Q MX29GL128E MX29GL256EHT2I-90Q
Text: MX29GL256E H/L MX29GL128E H/L MX29GL256E/128E H/L DATASHEET P/N:PM1435 REV. 0.03, MAR. 06, 2009 1 PRELIMINARY MX29GL256E H/L MX29GL128E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GL256E
MX29GL128E
MX29GL256E/128E
PM1435
64KW/128KB
MX29GL256
MX29GL128
mx29gl128eh
MX29GL128EL
MX29GL128elt2i-90g
MX29GL256ELT2I
MX29GL256ELT2I-90Q
MX29GL256EHT2I-90Q
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MX29GL256
Abstract: MX29GL256E MX29GL256EHT2 MX29GL256EHT2I-90Q 29GL256 MX29GL256EHMC MX29GL256EHT2I MX29GL256ELXFI-90Q MX29GL256EHXFI-90Q MX29GL256EHMC-90Q
Text: MX29GL256E MX29GL256E DATASHEET P/N:PM1499 REV. 1.2, NOV. 22, 2010 1 MX29GL256E SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256E
MX29GL256E
PM1499
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL256
MX29GL256EHT2
MX29GL256EHT2I-90Q
29GL256
MX29GL256EHMC
MX29GL256EHT2I
MX29GL256ELXFI-90Q
MX29GL256EHXFI-90Q
MX29GL256EHMC-90Q
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Untitled
Abstract: No abstract text available
Text: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 0.01, JUN. 30, 2009 1 PRELIMINARY MX29GL640E T/B MX29GL640E H/L FEATURES SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GL640E
PM1494
32Kword
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MX29GL512
Abstract: MX29GL512FHT MX29GL512FUXFI-12G MX29GL512FHXFI-11 MX29GL512FLT2 Q8-Q14
Text: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.4, JUL. 31, 2012 1 MX29GL512F Contents FEATURES. 5
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MX29GL512F
MX29GL512F
PM1617
MX29GL512
MX29GL512FHT
MX29GL512FUXFI-12G
MX29GL512FHXFI-11
MX29GL512FLT2
Q8-Q14
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Untitled
Abstract: No abstract text available
Text: MX29GL128E MX29GL128E DATASHEET P/N:PM1500 REV. 1.3, MAR. 08, 2011 1 MX29GL128E SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL128E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL128E
MX29GL128E
PM1500
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
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SA247
Abstract: No abstract text available
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.00, DEC. 10, 2009 1 ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
MX29GL256F
PM1544
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
SA247
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MX29GL128E
Abstract: MX29GL128E USPB MX29GL128eh
Text: MX29GL128E H/L MX29GL128E H/L DATASHEET P/N:PM1500 REV. 1.0, APR. 28, 2009 1 MX29GL128E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - V I/O voltage must tight with VCC
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MX29GL128E
PM1500
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL128E USPB
MX29GL128eh
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MX29GL640E
Abstract: MX29GL640E USPB
Text: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 0.00, MAR. 24, 2009 1 ADVANCED INFORMATION MX29GL640E T/B MX29GL640E H/L FEATURES SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations
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MX29GL640E
PM1494
32Kword
MX29GL640E USPB
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MX29GL256FHT2I-90Q
Abstract: MX29GL256F MX29GL256FLT2I-90Q 29GL256F MX29GL256FUXFI-11G PM1544 MX29GL256FLXFI-90Q MX29GL256FHT
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.2, OCT. 28, 2011 1 MX29GL256F Contents FEATURES. 5
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MX29GL256F
MX29GL256F
PM1544
MX29GL256FHT2I-90Q
MX29GL256FLT2I-90Q
29GL256F
MX29GL256FUXFI-11G
PM1544
MX29GL256FLXFI-90Q
MX29GL256FHT
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A910
Abstract: mx68gl1g0 MX68GL1G0FHMI-11G
Text: MX68GL1G0F H/L-70SSOP MX68GL1G0F H/L 70SSOP DATASHEET P/N:PM1750 REV. 0.00, AUG. 23, 2011 1 MX68GL1G0F H/L-70SSOP Contents 1. FEATURES. 6
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MX68GL1G0F
H/L-70SSOP
70SSOP)
PM1750
A910
mx68gl1g0
MX68GL1G0FHMI-11G
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MX29GL640E
Abstract: mx29gl640eb MX29GL640E USPB MX29GL640EBXEI-70G mx29gl640
Text: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 1.4, DEC. 27, 2011 1 MX29GL640E T/B MX29GL640E H/L Contents FEATURES. 5
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MX29GL640E
PM1494
mx29gl640eb
MX29GL640E USPB
MX29GL640EBXEI-70G
mx29gl640
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Untitled
Abstract: No abstract text available
Text: Reliability Summary of SEC555 AIGaAsrSi IRED Chip Long-Term Operating Life Study IRED CHIP DEGRADATION STUDIES MECHANICAL RELIABILITY Honeywell has an ongoing study ot degradation of radiant output over time as a function of temperature and current for the SEC555 aluminum gallium arsenide
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OCR Scan
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SEC555
SE3470,
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