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    Renesas Electronics Corporation BOSDF36049GHV

    (Alt: DF36049GHV)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica BOSDF36049GHV 22 Weeks 168
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    SDF360 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDF360 Solitron Devices VDS (V) =, Id Continuous Tc=25C (A) = 25, Idm Pulsed (A) = 100, RDS (On) (Ohms) =... Scan PDF
    SDF360JEAS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF360JEBU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF360JECD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF360JECU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF360JEDD Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF360JEDS Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF
    SDF360JEDU Solitron Devices N-CHANNEL ENHANCEMENT MOS FET Scan PDF

    SDF360 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SDF360JEBVGSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		SDF360JEBVGSN PDF

    Untitled

    Abstract: No abstract text available
    Text: SDF360JEAEHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		SDF360JEAEHU1N PDF

    Untitled

    Abstract: No abstract text available
    Text: SDF360JEASGU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		SDF360JEASGU1N PDF

    Untitled

    Abstract: No abstract text available
    Text: SDF360JEBSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		SDF360JEBSHD1N PDF

    Untitled

    Abstract: No abstract text available
    Text: SDF360JECSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		SDF360JECSHD1N PDF

    Untitled

    Abstract: No abstract text available
    Text: SDF360JECSHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		SDF360JECSHSN PDF

    Untitled

    Abstract: No abstract text available
    Text: SDF360JECSHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		SDF360JECSHU1N PDF

    Untitled

    Abstract: No abstract text available
    Text: SDF360JECVHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55


    Original     		SDF360JECVHD1N PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT C A T A L O G _ . ^ S l i t r o i l ogy,^ ,nc \K7 :{%f N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0.2 1Q 5DF360 SDF360 SDF360 5DF360 PARAMETER JEA JEB JEC JED • RUGGED PACKAGE •H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS


    OCR Scan     		5DF360 SDF360 5DF360 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE


    OCR Scan     		SDF360 MIL-S-19500 di/dt-100A/ 300cS. 03b0fc PDF

    JEC 400

    Abstract: N-Channel mosfet 400v 25A SDF360 1D-14a DIODE ED 99
    Text: PRODUCT CÂTÂL ^ » l i t r o n DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0 .2 1 Q SDF360 SDF360 SDF360 SDF360 JEA JEB JEC JED FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS


    OCR Scan     		SDF360 SDF360 300nS. JEC 400 N-Channel mosfet 400v 25A 1D-14a DIODE ED 99 PDF