S8050LT1 Search Results

S8050LT1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S8050LT1		Wing Shing Computer Components	PLASTIC-ENCAPSULATE TRANSISTORS		Original	PDF

S8050LT1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
j3y transistor Abstract: transistor j3y MARKING J3Y S8050LT1 SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y Text: PLASTIC-ENCAPSULATE TRANSISTORS S8050LT1 S8050LT1 TRANSISTOR（ NPN ） SOT— —23 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V BR CBO : 40 W（Tamb=25℃） 1. BASE A 2. EMITTER 3. COLLECTOR V CHARACTERISTICS（	Original	PDF	S8050LT1 OT--23 500mA 100mA 30MHz S8050LT1 j3y transistor transistor j3y MARKING J3Y SOT-23 J3Y s8050l S8050LT1-J3Y sot-23 Marking J3Y transistors marking HK S8050LT1 J3Y
s8550lt1 Abstract: s8050l S8050LT1 S8550 Text: S8550LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S8050LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	PDF	S8550LT1 S8050LT1 OT-23 -500mA 225mW -500mA -50mA s8550lt1 s8050l S8050LT1 S8550
s8050l Abstract: S8050LT1 S8050 S8550LT1 Text: S8050LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Complement to S8550LT1 Package:SOT-23 Collector Current :Ic= 500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	PDF	S8050LT1 S8550LT1 OT-23 500mA 225mW 500mA 062in Width300uS s8050l S8050LT1 S8050 S8550LT1
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S8050LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol Test ０．９５０．４０．９５１．９２．４１．３２．９	Original	PDF	OT-23 S8050LT1 500mA 30MHz S8050LT1
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	PDF	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	PDF	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
S8050L Abstract: 8050L S8050LT1 S8050LT1-J3Y Text: M C C SOT-23 P la s tic -E n cap s u la te T ra n s is to rs ^ S 8050L T1 TR A N SISTO R N PN 1 BASE 2 .EMITTER 3.COLLECTOR A “ ' FEATURES - o. Rower dissipation Pcm : 0.3 W (Tamb=25°C ) Collector current lCM: 0.5 A Collector-base voltage	OCR Scan	PDF	OT-23 8050L 500mA 100mA S8050LT1 S8050LT1 S8050L S8050LT1-J3Y