S5493 Search Results

S5493

Contextual Info: Bothhandusa.com ISDN S-INTERFACE TRANSFORMER P/N: S5493 DATA SHEET Feature ! ! ! ! Through hole, dual transformer. Excellent longitudinal balance Operating temperature range: 0°C to +70°C. Storage temperature range: -25℃ to +125℃. Electrical Specifications @ 25°C

Contextual Info: Si photodiodes S5493-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two active areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

S5493

Contextual Info: ISDN S-INTERFACE TRANSFORMER P/N: S5493 DATA SHEET A. General Specifications 1. Through hole, dual transformer. 2. Excellent longitudinal balance B. Electrical Specifications@25°C 1. Turns Ratio PRI:SEC±5% : 1:1 ( Coil A & Coil B ) 2. OCL( Pri ) : 22 mH Min @10KHz/0.2Vrms

S2833-01

Abstract: S4011-02 S4797-01 S5493-01 S5627-01 S6931 infrared CIRCUIT photodiode application illuminometer
Contextual Info: PHOTODIODE Si photodiode S5493-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Spectral response characteristics for these Si photodiodes can be selected to meet your application, from among the visible range, visible to near

Contextual Info: Si photodiodes S5493-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near IR range. Two active areas of 1.3 x 1.3 mm and 2.4 × 2.8 mm are also available.

s2833

Abstract: S2833-01 S4797-01 S5493-01 S5627-01 S6931
Contextual Info: PHOTODIODE Si photodiode S5493-01, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Spectral response characteristics for these Si photodiodes can be selected to meet your application, from among the visible range, visible to near

Si4982DY

Contextual Info: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

S5557

Abstract: S1087
Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional O utline (P.50 to 52)/ W indow M aterial "1 Active Area Size (mm) Effective Spectral Response Range Area X Peak Sensitivity W avelength X,p (mm2) (nm) (nm) 320 to 730

ir remote power meter

Abstract: spectrophotometer G1746
Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Si4966DY

Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET

Contextual Info: Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET P R O D U C T SUM M ARY v Ds m Rds«m ) ( ) I d {A) 0.025 @ VGS = 4.5 V ±7.1 0.035 @ VGS = 2.5 V ±6.0 i» -* 20 u D, SO -8 D, U o jl d2 ~5~1 D2 Dg D2 PARAMETER Ô Ô Si S2 N-Channel MOSFET N-Channet MOSFET

555 7490 7447 7 segment LED display

Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

Si4966DY

Contextual Info: Si4966DY Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(ON) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET

S3407

Abstract: SS493 S3407-01
Contextual Info: Si Photodiodes Visible/Visible to ÍR Range, for General Photometry Type No. Dimensional Outline (P.50 to 53)/ Window Material *1 Effective Active Area Active Spectral Response Range Peak Sensitivity Wavelength X Xp Photo Sensitivity S (A/W) - - . - • - He-Ne

FZK101

Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
Contextual Info: HANDBOOK OF INTESBATEI CIRCUITS in EQUIVALENTS AND SUBSTITUTES A lthough every care is taken with the preparation of this book, the publishers will not be responsible for any errors that might occur. I.S.B.N. 0 900162 35 X 1974 by Bernard B. Babani First Published 1974

Si4982DY

Contextual Info: Si4982DY Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3

S1133-02

Abstract: S1133-05 lk 46 PD-60 S1133 S1133-03 S1133-12 S2357 D107-P PD61
Contextual Info: - 258 - I £ typ.15 typ.15 typ.40 typ.1.15 _ - ? ÍJ i EV tlx 100 100 100 100 100 100 100 100 100 100 100 100 100 100 m 100 100 100 ÏD max ínA¡ 0.01 0.01 0.02 U.Ol 0.02 0.01 0.02 0.02 0.02 0.01 0.01 0.02 0.01 0.02 typ.D.Dl typ.0.01 typ.0.03 0.1 Vr V)

Contextual Info: T em ic SÌ4982DY S e m i c o n d u c t o r s Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS(V) I d (A) n>S(on) (ß ) 100 0.150 @ Vqs = 10 V ±2.6 0.180 @ Vqs = 6 V ±2.4 po*e SO-8 s' E 0, IX Œ g2 q : ~ n D! T 1 D, ID ~5~l D2 Top View Ô s Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Si4966DY

Contextual Info: Si4966DY Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) 20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Si4982DY

Contextual Info: Si4982DY Siliconix Dual N-Channel 100-V D-S Rated MOSFET New Product Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

74L47

Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
Contextual Info: $4*-5 The Integrated Circuits Catalog for Design Engineers First Edition T e x a s In s t r u m e n t s INCORPORATED CC-401 10072-41-US Printed in U.S.A. G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS