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    Essentra Components 12SWS3588

    SHOULDER WASHER .525 ID 1.105 OD
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    DigiKey 12SWS3588 Bulk 360 1
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    Mouser Electronics 12SWS3588
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    Vox Power Ltd NEVO-600S-3588-DK000

    AC/DC CNVT 24V 2X12V 3X24V 450W
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    DigiKey NEVO-600S-3588-DK000 Box 15
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    Essentra Components 12SWS3588B

    Washers Shoulder Washer, .525 ID, 1.105 OD, .740 Shank OD
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    Mouser Electronics 12SWS3588B
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    AS PN'S AS3588-05

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    Bisco Industries AS3588-05 12
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    SOURIAU-SUNBANK S3588-12-70-1

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    Quest Components S3588-12-70-1 27
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    S3588 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S3588-08 Hamamatsu Si PIN photodiode - Large area sensors for scintillation detection Original PDF
    S3588-08 Hamamatsu Photonics Si PIN photodiode Original PDF
    S3588-09 Hamamatsu Si PIN photodiode - Large area sensors for scintillation detection Original PDF

    S3588 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance


    Original     		PDF S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E06

    Untitled

    Abstract: No abstract text available
    Text: Si PINフォトダイオード S2744/S3588-08, -09 大面積Si PINフォトダイオード 特長 用途 BGOCsI TI シンチレータに適した感度 高量子効率 (未封止タイプ): QE=85 % (λ=540 nm) シンチレーション検出 低容量 TOFカウンタ


    Original     		PDF S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 KPINA0109JA KPINA0042JB KPIN1049J01

    S2744-08

    Abstract: S2744-09 S3588-08 S3588-09
    Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)


    Original     		PDF S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E03 S2744-08 S2744-09 S3588-08 S3588-09

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)


    Original     		PDF S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E04

    Untitled

    Abstract: No abstract text available
    Text: Si PIN photodiode S2744/S3588-08, -09 Large active area Si PIN photodiodes Features Applications Sensitivity matching with BGO and CsI TI scintillators Scintillation detectors High quantum efficiency (Unsealed type): QE=85 % (λ=540 nm) Hodoscopes Low capacitance


    Original     		PDF S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E06

    S2744-08

    Abstract: S2744-09 S3588-08 S3588-09
    Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)


    Original     		PDF S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E05 S2744-08 S2744-09 S3588-08 S3588-09

    scintillator

    Abstract: S2744-08 S3588-08
    Text: PHOTODIODE Si PIN photodiode S2744/S3588-08 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)


    Original     		PDF S2744/S3588-08 S2744-08 S3588-08 SE-171 KPIN1049E01 scintillator S2744-08 S3588-08

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)


    Original     		PDF S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E02

    S2744-08

    Abstract: S2744-09 S3588-08 S3588-09 PIN photodiode 420 nm
    Text: PHOTODIODE Si PIN photodiode S2744/S3588-08, -09 Large area sensors for scintillation detection Features Applications ● Higher sensitivity and low dark current than conventional type ● Sensitivity matching with BGO and CsI TI scintillators ● High quantum efficiency QE=85 % (λ=540 nm)


    Original     		PDF S2744/S3588-08, S2744-08 S2744-09 S3588-08 S3588-09 SE-171 KPIN1049E04 S2744-08 S2744-09 S3588-08 S3588-09 PIN photodiode 420 nm

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    S8558

    Abstract: No abstract text available
    Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.47)/ Window Material Package Active Area Effective Size Active Area (mm) (mm2) 25 S5106 @/R Ceramic 5X5 S5107 ® /R Chip-carrier 10X10 100 S3590-01 S3590-08 ® /R S3204-08 @/R S3584-08 S3588-08 Photo Sensitivity S Typ. (A/W)


    OCR Scan     		PDF 10X10 S3584-08 S3588-08 S3204-08 S3590-01 S2744-08 S5106 S5107 S3590-08

    Untitled

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.40-43)/ Window Material*' S1223 S1223 01 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590 01 S3590 03 S3590 05 S3588 03 *1 W i n d o w m aterial, O /K K /K © /K ® /K ® /K ® /R ® /R Short Photo Sensitivity S (A/W) Typ.


    OCR Scan     		PDF S1223 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    S2973-01

    Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
    Text: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active


    OCR Scan     		PDF S5821 S5821-01 S5821-02 S5821-03 S5971 S5972 S5973 S5973-01 S5973-02 S5821 S2973-01 S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968

    P4950

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 5 Type No. I Dimensional Outline (P.49, 50)/ Window Material *1 Package (mm) S5106 /R Ceramic S5107 @ /R Chip-carrier 57509 ; ; Active Effective j Active Area Size; Area ! 5 x 5 10 x 10 j : 2xio ® r ; (mm2) Spectral Response Range


    OCR Scan     		PDF S3590-08 S2744-08 S3204-08 S3584-08 S3588-08 S5106 S5107 S3590-01 P4950

    Untitled

    Abstract: No abstract text available
    Text: Large-area Si PIN Photodiodes Type N o. R e m a rk s O u t-*1 line W in d o w *2 M a te ria l A c tiv e *3 A re a S p e c tra l R esponse R ange 300 f i m Wafer Thickness Types 10 x 10 mm active area S3590-08 o 10 x 10 10 x 20 mm active area 10 X 20 S3204-08


    OCR Scan     		PDF S3590-08 S3204-08 S3584-08 S3588-08 S2744-08

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan     		PDF S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		PDF S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    S2216 02

    Abstract: 54752 S1190-03
    Text: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.


    OCR Scan     		PDF S2216-01 S2839 S2840 S1190 S1190-01 S1190-03 S4280 S4751 S5531 S5532 S2216 02 54752