TRS10E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L |
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TRS10H120H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, TO-247-2L |
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TRS10V65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V,104 A, DFN8×8 |
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TRS10N120HB
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 1200 V, 10 A, 2 in 1, TO-247 |
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UPD70F3921GC(S)-UEU-AX
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Renesas Electronics Corporation
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32-bit Microcontrollers |
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