RN1108F Search Results

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT
Contextual Info: RN1107FT~RN1109FT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107FT,RN1108FT,RN1109FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT RN2109FT
Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications R2 B R1 Type No. R1 (kΩ) R2 (kΩ) RN1107FS

Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT RN2109FT
Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN1108FS

Abstract: RN1107FS RN1109FS RN2107FS RN2109FS
Contextual Info: RN1107FS~RN1109FS 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107FS,RN1108FS,RN1109FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1107F

Abstract: RN1107FT RN1108F RN1108FT RN1109F RN1109FT RN2107FT
Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: TOSHIBA RN1107F~RN1109F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1107F, RN1108F, RN1109F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U nit in mm AND DRIVER CIRCUIT APPLICATIONS. 1.6 ± 0.1 0.85 ± 0 .1 • W ith Built-in Bias Resistors

ic 311 pdf datasheets

Abstract: RN1107F RN1108F RN1109F RN2107F
Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107F,RN1108F,RN1109F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process

RN1107FS

Abstract: RN1108FS RN1109FS RN2107FS RN2109FS
Contextual Info: RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Complementary to RN2107FS~RN2109FS R2

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT RN2109FT
Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN1107F

Abstract: RN1108F RN1109F RN2107F
Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107F,RN1108F,RN1109F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1107F

Abstract: RN1108F RN1109F RN2107F RN2109F
Contextual Info: RN1107F～RN1109F 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107F,RN1108F,RN1109F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1107FT

Abstract: RN1108FT RN1109FT RN2107FT
Contextual Info: 8RN1107FT~RN1109FT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1107FT,RN1108FT,RN1109FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN1107FV

Abstract: RN2107FV RN1108FV RN1109FV RN2109FV
Contextual Info: RN1107FV~RN1109FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107FV,RN1108FV,RN1109FV Unit: mm 1.2 ± 0.05 0.22 ± 0.05 Complementary to RN2107FV~RN2109FV 0.4 Reduce a quantity of parts and manufacturing process 1 1 0.4 1.2 ± 0.05 Simplify circuit design

RN1107F

Abstract: RN1108F RN1109F RN2107F
Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107F,RN1108F,RN1109F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107F,RN1108F,RN1109F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN1107FV~RN1109FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107FV, RN1108FV, RN1109FV Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22 ± 0.05 1.2 ± 0.05 Complementary to RN2107FV~RN2109FV R2 (kΩ)

Contextual Info: RN1107FT~RN1109FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1107FT, RN1108FT, RN1109FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin

RN1107F

Abstract: RN1108F RN1109F RN2107F
Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1107F,RN1108F,RN1109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors.

RN1107F

Abstract: RN1108F RN1109F RN2107F 1109F
Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107F,RN1108F,RN1109F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: TOSHIBA RN1107F-RN1109F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1107F, RN1108F, RN1109F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1.6 ± 0.1 • • • • With Built-in Bias Resistors

Contextual Info: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1107F,RN1108F,RN1109F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process