RJU60C1SDPD Search Results

Contextual Info: Preliminary Datasheet RJU60C1SDPD Single Diode Fast Recovery Diode R07DS0372EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 60 ns typ. at IF = 3 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 5 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

Contextual Info: Preliminary Datasheet RJU60C1SDPD Single Diode Fast Recovery Diode R07DS0372EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 60 ns typ. at IF = 3 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 5 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
Contextual Info: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output