RJP1CS06DWT Search Results
RJP1CS06DWT Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA Silicon N Channel IGBT Application: Inverter R07DS0829EJ0003 Rev.0.03 Aug 09, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) High speed switching |
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RJP1CS06DWT/RJP1CS06DWA R07DS0829EJ0003 RJP1CS06DWT-80 RJP1CS06DWA-80 | |
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Contextual Info: Preliminary Datasheet RJP1CS06DWT/RJP1CS06DWA 1250V - 100A - IGBT Application: Inverter R07DS0829EJ0100 Rev.1.00 Jan 23, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) High speed switching |
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RJP1CS06DWT/RJP1CS06DWA R07DS0829EJ0100 RJP1CS06DWT-80 RJP1CS06DWA-80 R07DS0829EJ0100 1250sas | |
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Contextual Info: Datasheet RJP1CS06DWT / RJP1CS06DWA 1250V - 100A - IGBT Application: Inverter R07DS0829EJ0200 Rev.2.00 Oct 07, 2013 Features • Low collector to emitter saturation voltage VCE sat = 1.8 V typ. (at IC = 100 A, VGE = 15 V, Tc = 25°C) • High speed switching |
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RJP1CS06DWT RJP1CS06DWA R07DS0829EJ0200 RJP1CS06DWT-80 RJP1CS06DWA-80 |