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    RJK0660DPA Search Results

    RJK0660DPA Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0660DPA-00#J5A Renesas Electronics Corporation Nch Single Power Mosfet 60V 40A 5.1Mohm Wpak Visit Renesas Electronics Corporation
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    RJK0660DPA Price and Stock

    Renesas Electronics Corporation RJK0660DPA-00-J5A

    MOSFET N-CH 60V 40A 8WPAK
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    DigiKey RJK0660DPA-00-J5A Reel 6,000 3,000
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    RJK0660DPA-00-J5A Cut Tape 1
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    RJK0660DPA-00-J5A Digi-Reel 1
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    Renesas Electronics Corporation RJK0660DPA-00#J5A

    Trans MOSFET N-CH 60V 40A 8-Pin WPAK(3F) T/R - Tape and Reel (Alt: RJK0660DPA-00#J5A)
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    Avnet Americas RJK0660DPA-00#J5A Reel 18 Weeks 3,000
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    Mouser Electronics RJK0660DPA-00#J5A
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    Avnet Asia RJK0660DPA-00#J5A 12 Weeks 3,000
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    Flip Electronics RJK0660DPA-00#J5A 3,000
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    RJK0660DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK0660DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A WPAK Original PDF

    RJK0660DPA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0660DPA 60V, 40A, 5.1mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0346EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance


    Original     		RJK0660DPA R07DS0346EJ0300 PWSN0008DE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0660DPA R07DS0346EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 4.2 mΩ typ. (at VGS = 10 V)


    Original     		RJK0660DPA R07DS0346EJ0100 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0660DPA R07DS0346EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 4.2 mΩ typ. (at VGS = 10 V)


    Original     		RJK0660DPA R07DS0346EJ0100 PWSN0008DC-B PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF