Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJK03E9DPA Search Results

    RJK03E9DPA Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJK03E9DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK03E9DPA-00#J53 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation

    RJK03E9DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK03E9DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A WPAK Original PDF

    RJK03E9DPA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Rev.2.10 May 20, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.5 m typ. (at VGS = 8 V)


    Original     		RJK03E9DPA REJ03G1933-0210 PWSN0008DC-A ca9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Rev.2.10 May 20, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.5 m typ. (at VGS = 8 V)


    Original     		RJK03E9DPA REJ03G1933-0210 PWSN0008DC-A d9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03E9DPA 30V, 35A, 4.3m max. N Channel Power MOS FET High Speed Power Switching R07DS0935EJ0400 Rev.4.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03E9DPA R07DS0935EJ0400 PWSN0008DE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03E9DPA 30 V, 35 A, 4.3 m max. N Channel Power MOS FET High Speed Power Switching R07DS0935EJ0300 Previous: REJ03G1933-0210 Rev.3.00 Nov 09, 2012 Features •       High speed switching Capable of 4.5 V gate drive


    Original     		RJK03E9DPA R07DS0935EJ0300 REJ03G1933-0210) PWSN0008DC-B PDF