RG2006
Abstract: RG2006ln A1434-1
Contextual Info: RG2006LN 注文コード No. N A 1 4 3 4 A 三洋半導体データシート 半導体データシート No.NA1434 をさしかえてください。 RG2006LN シリコン拡散接合型 低 VF・高速スイッチングダイオード 特長 ・高耐圧である VRRM=600V 。
|
Original
|
RG2006LN
NA1434
IT13677
IT14499
IT14498
IT13678
A1434-2/3
A1434-3/3
RG2006
RG2006ln
A1434-1
|
PDF
|
RG2006
Abstract: A1434-1 TC-00002137 ENA1434A
Contextual Info: RG2006LN Ordering number : ENA1434A SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
|
Original
|
RG2006LN
ENA1434A
PW100s,
cycle50%
A1434-3/3
RG2006
A1434-1
TC-00002137
ENA1434A
|
PDF
|
RG2006
Abstract: ENA1434 A1434-1 VRRM600V
Contextual Info: RG2006LN Ordering number : ENA1434 SANYO Semiconductors DATA SHEET RG2006LN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic mold package facilitating easy mounting and heat dissipation.
|
Original
|
RG2006LN
ENA1434
A1434-3/3
RG2006
ENA1434
A1434-1
VRRM600V
|
PDF
|