RFD14N05 Search Results

14N05

Abstract: 14n05l 05LSM AN7254 AN9321 AN9322 RFD14N05L RFD14N05LSM RFD14N05LSM9A TB334
Contextual Info: RFD14N05L, RFD14N05LSM Data Sheet 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet Title FD1 05L D14 5LS P14 5L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using

f14n05

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet Title FD1 05, D14 5S P14 5 bt A, V, 00 m, anwer OSTs) utho eyrds ter- July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

f14n05l

Abstract: f14n05 14n05l 14N05 AN9321 RFD14N05L RFD14N05LSM RFD14N05LSM9A RFP14N05L TB334
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Abstract: FP14N05L RFD14N05LSM9A 14N05
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L in te v s il D a ta S h e e t A p r i l 1999 14A, SOV, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs 2 2 4 6 .3 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

Contextual Info: RFD14N05L, RFD14N05LSM Data Sheet N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

Contextual Info: RFD14N05L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)35# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ

Contextual Info: RFD14N05LSM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)35# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ

f14n05

Abstract: AN9321 AN9322 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 TB334 mosfet 4413
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09770. Ordering Information PACKAGE 2268.5 Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

d14n05

Abstract: d14n05 220 package RFD14N05 AN9321 RFD14N05SM RFD14N05SM9A RFP14N05 TB334
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Abstract: 14N05 RFD14N05LSM9A TB334 AN9321 RFD14N05L RFD14N05LSM RFP14N05L
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet January 2002 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

f14n05

Abstract: RFD14N05 RFP14N05 AN9321 AN9322 RFD14N05SM RFD14N05SM9A TB334
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

14n05l

Abstract: 14N05 Transistor TT 2246 TT 2246 RFD14N05LSM RFP14N05L RFD14N05L rs 355 integrated circuits FP14N05L AN7254
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 14A, 50V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

RFP14N05

Abstract: RFD14N05 RFD14N05SM rca MIL ID
Contextual Info: Power MegaFETs - RFD14N05, RFD14N05SM, RFP14N05 File Number 2 268 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs TERMINAL DIAGRAM 14 A, 50 V Tds(on) “ o.m Features: • Single pulse avalanche energy rated

f14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14N05

Abstract: FT4N05 F14N05
Contextual Info: f f ï H A ^ 8 E“ ' R R RFD14N05, RFD14N05SM, RFP14N05 I S 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO -220A B • 14A, 5 0 V • r DS ON = 0.10012 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M odel

f14n05

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 interrii — 1 D a ta S h e e t J u ly 1 9 9 9 , • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

f14n05

Abstract: RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334
Contextual Info: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

Contextual Info: RFD14N05SM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)35# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)48# Minimum Operating Temp (øC)-55õ

RFD14N05L

Abstract: 14N05 RFP14N05L RFD14N05LSM
Contextual Info: Logic-Level Pow er M O S F E T s - RFD14N05L, RFD14N05LSM, RFP14N05L File Number 2246 N-Channel Logic-Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 14 A, 50 V rDs(on): 0.1 Cl N -C H A N N EL E N H A N C E M E N T M ODE

Contextual Info: RFD14N05 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)35# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)48# Minimum Operating Temp (øC)-55õ

Contextual Info: RFD14N05SM9A September 2013 Data Sheet Features N-Channel Power MOSFET 50V, 14A, 100 mΩ • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives