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    RF3S49092SM9A Price and Stock

    Rochester Electronics LLC RF3S49092SM9A

    MOSFET N/P-CH 12V 20A TO263-5
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    DigiKey RF3S49092SM9A Bulk 107
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    FAIRCHILD RF3S49092SM9A

    RF3S49092SM9A
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    Verical RF3S49092SM9A 1,459 119
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    RF3S49092SM9A 800 119
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    Fairchild Semiconductor Corporation RF3S49092SM9A

    Power Field-Effect Transistor, 20A, 12V, 0.06ohm, 2-Element, N-Channel and P-Channel, MOSFET, MO-169AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RF3S49092SM9A 2,259 1
    • 1 $2.7
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    RF3S49092SM9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF3S49092SM9A Intersil 20A / 10A, 12V, 0.060 / 0.140 Ohm, Logic Level, Complementary Power MOSFET Scan PDF

    RF3S49092SM9A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    MOSFET S1A

    Abstract: datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322
    Text: RF3V49092, RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    Original     		RF3V49092, RF3S49092SM 0A/10A, MOSFET S1A datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322 PDF

    MO-169AB

    Abstract: RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs
    Text: RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in


    Original     		RF3S49092SM 0A/10A, MO-169AB RF3S49092SM RF3S49092SM9A N-Channel UltraFET Power MOSFETs PDF

    AN9321

    Abstract: AN9322 an7254 AN7260
    Text: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    OCR Scan     		RF3V49092, RF3S49092SM 0A/10A, AN7254 AN7260. RF3S49092SM AN9321 AN9322 AN7260 PDF

    AN7254

    Abstract: AN9321 AN-7260
    Text: RF3V49092, RF3S49092SM in t e ik il D a ta S h e e t 20A/1QA, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power M O SFET Th e se complementary power M O S F E T s are manufactured using an advanced M e g aFET process. Th is process, which u ses feature size s approaching those of L S I integrated


    OCR Scan     		RF3V49092, RF3S49092SM AN7254 AN7260. AN9321 AN-7260 PDF

    RF3S49092SM9A

    Abstract: MO-169AB RF3S49092SM RF3V49092 ZT600
    Text: RF3V49092, RF3S49092SM interrii Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    OCR Scan     		RF3V49092, RF3S49092SM 0A/10A, RF3S49092SM9A MO-169AB RF3S49092SM RF3V49092 ZT600 PDF

    TPG1212

    Abstract: PIN diode Pspice model
    Text: RF3V49092, RF3S49092, RF3S49092SM S e m iconductor November 1998 Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFETs These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    OCR Scan     		RF3V49092, RF3S49092, RF3S49092SM 0A/10A, 1-800-4-HARRIS TPG1212 PIN diode Pspice model PDF