RF200 Search Results

RF2001T4S

Contextual Info: RF2001T4S Diodes Fast recovery diode RF2001T4S zApplications General rectification zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 8.0±0.2 12.0±0.2 zConstruction Silicon epitaxial planar 5.0±0.2

rf2001

Abstract: RF2007 RF2005 rf2000 FL01
Contextual Info: » m FAGOR S7E 345^5 D D G D ? n 754 IFGRS RF2001 . RF2007 „ FAGOR ELECTRONICS .Amp. Silicon Rectifier Diodes • Dimensions in nun. DO-15 Voltage 50 to 1.000 V. Plastic Current 2.0 A. at 55°C. Mounting instructions 1. Min. distance from body to soldering point,

RF2001-T3D

Contextual Info: Data Sheet Fast recovery diodes RF2001T3D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss 8.0±0.2

RF2001T2D

Contextual Info: RF2001T2D Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 5.0±0.2 ① 13.5MIN 1.2 Construction Silicon epitaxial planar

Contextual Info: Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions Unit : mm Structure Features 1) High reliability. (TO-220) 2) Low noise. 3) Very fast switching . (1) (2) (3) Construction Silicon epitaxial planar

RF2001

Abstract: RF2007 rf2000 RF2005
Contextual Info: RF2001 . RF2007 2 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 2.0 A. at 55°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

RF2001T3D

Abstract: bv-300 RF*T3D RF2001 TRS1 DRF2001T3D RF2001-T3D ,RF2001T3D
Contextual Info: SPICE PARAMETER RF2001T3D by ROHM FAE Div. * RF2001T3D D model * Date: 2008/07/29 .MODEL RF2001T3D D + IS=15.486E-9 + N=1.4399 + RS=22.191E-3 + IKF=94.033E-3 + CJO=363.34E-12 + M=.48883 + VJ=.59618 + ISR=101.31E-12 + NR=4 + BV=300 + TT=41.113E-9 + TRS1=-0.001

LDA312G4413H-280

Abstract: LDA312G4413H SM200 SM200P81 LDA31
Contextual Info: DATA SHEET RF Engine Model SM200 Part Numbers: SM200P81 and RF200P81 Document Revision v1.1 2011 Synapse, All Rights Reserved All Synapse products are patented or patent pending Specifications are subject to change without notice – confirm that data is current

U9O-RF200

Abstract: RF200PF1 430133-01C RF200PD1 emetteur radio
Contextual Info: DATA SHEET RF Engine 200 Series Model Number: RF200 Part Numbers: RF200PD1 and RF200PF1 Document Revision v2.0 2012 Synapse, All Rights Reserved All Synapse products are patented or patent pending Specifications are subject to change without notice – confirm that data is current

RF2001

Abstract: RF2001n
Contextual Info: Data Sheet Super Fast Recovery Diode RF2001NS3D Series Standard Fast Recovery Dimensions Unit : mm Land size figure (Unit : mm) RF2001 NS3D Applications General rectification ① Features 1)Ultra low switching loss 2)High current overload capacity

BAI59

Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
Contextual Info: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .

RF2001T2D

Contextual Info: Fast recovery diode RF2001T2D Dimensions Unit : mm Applications General rectification  Structure 4.5±0.3 0.1 15.0±0.4 0.2 8.0±0.2 12.0±0.2 ① 8.0 (1) (2) (3) 5.0±0.2 1.2 13.5MIN Features 1) Cathode common type. (TO-220)

2360a

Abstract: RF2001T4S rf2001t
Contextual Info: Fast recovery diode RF2001T4S Applications General rectification  Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) High reliability.(TO-220) 2) Low noise. 3) Very fast switching . 15.0±0.4 0.2 8.0 8.0±0.2

DBT134

Contextual Info: MOTOROLA Order this document by RF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

2360A

Abstract: RF2001T4S
Contextual Info: RF2001T4S Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) High reliability. (TO-220) 2) Low noise. 3) Very fast switching . 15.0±0.4

RF2001T3D

Contextual Info: RF2001T3D Data Sheet Fast recovery diodes RF2001T3D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss

LDA312G4413H-280

Contextual Info: DATA SHEET RF Engine Model SM200 Part Numbers: SM200P81 and RF200P81 SM200PU1 and RF200PU1 Document Revision v1.4 2012-2013 Synapse Wireless, All Rights Reserved All Synapse products are patented or patent pending Specifications are subject to change without notice – confirm that data is current

bd135 equivalent

Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The RF20060 and RF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high

Contextual Info: Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery

RF2001T4S

Contextual Info: RF2001T4S Diodes Fast recovery diode RF2001T4S zApplications General rectification zDimensions Unit : mm zStructure 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 8.0±0.2 12.0±0.2 zConstruction Silicon epitaxial planar 5.0±0.2 ① 8.0

rf2001

Abstract: RF2007 rf2000 2 amp silicon rectifier
Contextual Info: RF2001 . RF2007 2 Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1000 V. Current 2.0 A. at 55°C. 6.35 ± 0.2 58.5 min. • Low cost Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

Contextual Info: Data Sheet AEC-Q101 Qualified Fast recovery diodes RF2001T3DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss

rf2000

Abstract: rf coupler
Contextual Info: RF2000 2200 - 50 RF Power Amplifier This solid state power amplifier is designed for realiable,trouble-free service.It operate in a class A and includes RF protection circuits,cooling installations so as a 230 V AC power supply. The amplifier is accommodated in a 19" system housing.

RF2001T2D

Contextual Info: RF2001T2D Diodes Fast recovery diode RF2001T2D zApplications General rectification zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2