RCP13 Search Results

Contextual Info: Shielded PIN Type RCP1317 DIMENSIONS mm WIRE 外形寸法図 Max. 17.5 4.8 ø0.7 øMax. 13.5 線種 5.0 CONSTRUCTION 磁気構造図 ( 33µH - 4.7mH ) RCR1616 DIMENSIONS (mm) WIRE 外形寸法図 Max. 16.5 5.0 ø0.8 øMax. 16.5 線種 7.5 CONSTRUCTION ( 4.7µH - 1.0mH )

Contextual Info: RCP135 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP133B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP131B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

RCP1317NP-122L

Abstract: RCP1317 RCP1317NP-121L RCP1317NP-151L RCP1317NP-181L RCP1317NP-221L RCP1317NP-472L
Contextual Info: POWER INDUCTORS < Pin Type: RCP Series > Type: RCP1317 ◆ Product Description ・13.5mm Max.φ, 17.5mm Max.height. ・Inductance range :33 H～4.7mH. ・Rated Current Range: 0.37～3.6A. ◆ Feature ・Magnetically shielded construction. ・Ideally Used in Printers, LCD TV, Copy Machine, Mainboard of the compounding machines,

sfernice RCP12

Abstract: RCP12
Contextual Info: Data sheet E 5/3.368 - 10497 2 W and 4 W at 25°C NF C 83-210 power metal oxide film resistors ROP SPECIFICATIONS Table 2 SFERNICE SERIES ROP2 ROP4 CCTU 04-06A N FC/UTE 83-210 RCP12 RCP13 SFERNICE Pr at 25°C 2W 4W NF C Pr at 70°C 1,5 W 3W out of nominal ohmic range

RCP1317NP-470M

Contextual Info: PIN Power Inductor RCP1317 Description • Ferrite drum core construction. • Magnetically shielded. • L W H: 13.5 13.5 17.5mm Max. • Product weight: 8.9 g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × × × Environmental Data

Contextual Info: RCP137 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: POWER INDUCTORS < Pin Type > ø12 series RCH1216B DIMENSIONS mm Max. 16.0 5.0 5.0 ø0.7 Max. ø12.5 CONSTRUCTION CONNECTION 4 1 4 1 3 2 3 2 ( 10µH - 47µH ) ( 10µH - 2.2mH ) ( 56µH - 2.2mH ) BOTTOM VIEW 4.0 ø13 series RCP1317 DIMENSIONS (mm) Max.17.5

Contextual Info: PIN Power Inductor RCP1317 Description • Ferrite drum core construction. • Magnetically shielded. • L W H: 13.5 13.5 17.5mm Max. • Product weight: 8.9 g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × × × Environmental Data

Contextual Info: RCP133C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP131C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

RCP12

Abstract: CCTU ROP2
Contextual Info: ROP Vishay Sfernice Power Metal Oxide Film Resistors FEATURES • 2W and 4W at 25°C • NF C 83-210 • Good overload performance • High reliability level • Small size The “ROP” resistors combine low price with outstanding performance and are therefore suitable for both professional

TRANSISTOR C 6090 npn

Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
Contextual Info: lc sat Features •Excellent switching performance at high volt­ age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in­ cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design

ZENER DIODE z91

Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
Contextual Info: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

CDRH2D18HP

Abstract: CLS sumida
Contextual Info: INDEX POWER INDUCTORS CONTENTS INDEX Scope of Sumida products, general stipulations for coil use Standard for RoHS Applications Pin Type Suitable range of inductance and rated D.C. current Suitable range of inductance and rated D.C. current with max. height

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry