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    HS350

    Abstract: NE3519M04
    Text: PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier FEATURES • Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz • Flat-lead 4-pin thin-type super minimold M04 package


    Original     		PDF NE3519M04 R09DS0008EJ0100 NE3519M04-T2 NE3519M04-T2-A NE3519M04-T2B NE3519M04-T2B-A HS350 NE3519M04