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    Text: Data Sheet HAT1069C R07DS1169EJ0400 Previous: REJ03G0164-0300 Rev.4.00 Mar 19, 2014 Silicon P Channel Power MOS FET Power Switching Features • Low on-resistance RDS(on) = 38 m Ω typ (at VGS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive


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    PDF HAT1069C R07DS1169EJ0400 REJ03G0164-0300) PWSF0006JA-A tempera2886-9022/9044