R07DS0496EJ0400 Search Results
R07DS0496EJ0400 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RQA0004LXAQSContextual Info: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0400 Rev.4.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz Compact package capable of surface mounting |
Original |
RQA0004LXAQS R07DS0496EJ0400 PLZZ0004CA-A RQA0004LXAQS |