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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 Previous: REJ03G1106-0200 Rev.3.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge


    Original     		PDF H5N2504DL, H5N2504DS R07DS0399EJ0300 REJ03G1106-0200) PRSS0004ZD-B PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 Previous: REJ03G1106-0200 Rev.3.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge


    Original     		PDF H5N2504DL, H5N2504DS R07DS0399EJ0300 REJ03G1106-0200) PRSS0004ZD-B PRSS0004ZD-C