TO-220FL
Abstract: No abstract text available
Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ
|
Original
|
RJP30E3DPP-M0
R07DS0353EJ0200
O-220FL
PRSS0003AF-A)
O-220FL)
TO-220FL
|
PDF
|
rjp30
Abstract: RJP30E
Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ
|
Original
|
RJP30E3DPP-M0
R07DS0353EJ0200
O-220FL
PRSS0003AF-A)
O-220FL)
rjp30
RJP30E
|
PDF
|
RJP30E3
Abstract: RJP30e rjp30 RJP30E3DPP-M0 rjp30e3dpp rjp*30
Text: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ
|
Original
|
RJP30E3DPP-M0
O-220FL
R07DS0353EJ0200
PRSS0003AF-A)
O-220FL)
RJP30E3
RJP30e
rjp30
RJP30E3DPP-M0
rjp30e3dpp
rjp*30
|
PDF
|