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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0660DPA R07DS0346EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 4.2 mΩ typ. (at VGS = 10 V)


    Original
    RJK0660DPA R07DS0346EJ0100 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0660DPA R07DS0346EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 4.2 mΩ typ. (at VGS = 10 V)


    Original
    RJK0660DPA R07DS0346EJ0100 PWSN0008DC-B PDF