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    Text: Preliminary Datasheet RJK0631JPD Silicon N Channel Power MOS FET High Speed Power Switching R07DS0252EJ0300 Rev.3.00 Jul 24, 2013 Features • • • • • For Automotive application Low on-resistance : RDS on = 12 mΩ typ. Capable of 4.5 V gate drive


    Original     		PDF RJK0631JPD R07DS0252EJ0300 AEC-Q101 PRSS0004ZD-C