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    RJH60D3

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH60D3DPE Silicon N Channel IGBT Application: Inverter R07DS0161EJ0400 Rev.4.00 Mar 09, 2011 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJH60D3DPE R07DS0161EJ0400 PRSS0004AE-B RJH60D3