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    RJK0851DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0851DPB R07DS0079EJ0102 Previous: REJ03G1773-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Functions •     Low on-resistance RDS(on) = 18 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		RJK0851DPB R07DS0079EJ0102 REJ03G1773-0101) PTZZ0005DA-A cur9044 RJK0851DPB PDF

    RJK0851DPB

    Abstract: RJK0851
    Text: Preliminary Datasheet RJK0851DPB R07DS0079EJ0102 Previous: REJ03G1773-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Functions •     Low on-resistance RDS(on) = 18 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		RJK0851DPB R07DS0079EJ0102 REJ03G1773-0101) PTZZ0005DA-A Ava9044 RJK0851DPB RJK0851 PDF